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Multilayer Graphene-Based Carbon Interconnect

Published online by Cambridge University Press:  28 February 2012

Tianhua Yu ,
Edwin Kim ,
Nikhil Jain  and
Bin Yu
Tianhua Yu
Affiliation:
College of Nanoscale Science and Engineering, State University of New York at Albany, Albany, NY 12203, U.S.A. Novellus Systems Inc. San Jose, CA 95134, U.S.A.
Edwin Kim
Affiliation:
College of Nanoscale Science and Engineering, State University of New York at Albany, Albany, NY 12203, U.S.A.
Nikhil Jain
Affiliation:
College of Nanoscale Science and Engineering, State University of New York at Albany, Albany, NY 12203, U.S.A.
Bin Yu
Affiliation:
College of Nanoscale Science and Engineering, State University of New York at Albany, Albany, NY 12203, U.S.A.
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Abstract

3D stacked (or uncorrelated) multilayer graphene (s-MLG) is investigated as a potential material platform for carbon-based on-chip interconnects. S-MLG samples are prepared by repeatedly transferring and stacking the large-area CVD-grown graphene monolayers, followed by wire patterning and oxygen plasma etching of graphene. We observed superior wire conduction of s-MLG over that of monolayer graphene or ABAB-stacked multilayer graphene. Further reduction of s-MLG resistivity is anticipated with increasing number of stacked layers. Electrical stress-induced doping technique is used to engineer the Dirac point, as well as to reduce graphene-to-metal contact resistance, improving the overall performance metrics of the s-MLG system. Breakdown experiments show that the current-carrying capacity of s-MLG is significantly enhanced as compared with that of monolayer graphene.

Keywords

nanoscalemicroelectronicsnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1407: Symposium AA – Carbon Nanotubes, Graphene and Related Nanostructures , 2012 , mrsf11-1407-aa15-26
Copyright
Copyright © Materials Research Society 2012

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