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M.O.S. Transistors with > 1 μm Thick Gate Oxide for Ionizing Radiation Dosimetry

Published online by Cambridge University Press:  21 February 2011

F. Gessinn  and
G. Sarrabayrouse
F. Gessinn
Affiliation:
L.A.A.S./C.N.R.S., 7 Avenue Colonel Roche, F-31077 TOULOUSE Cedex, France
G. Sarrabayrouse
Affiliation:
L.A.A.S./C.N.R.S., 7 Avenue Colonel Roche, F-31077 TOULOUSE Cedex, France
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Abstract

The effects of ionizing radiation on MOS transistors with gate oxide thickness up to 2 μm have been investigated. The major focus of workers in this area has been on the hardening techniques of technologies. On the other side, our goal is to use MOS devices to reach higher sensitivities in order to detect small amounts of dose. Therefore, sensitivity as well as temperature response in the mil-std range and stability of the dosimeters have been studied.

Keywords

metal-oxide-semiconductor (MOS)dosimeterionizing radiationsensitivitystabilityanneal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 555
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Ma, T.P. & Dressendorfer, P.V., Ionizing radiation effects in MOS devices and circuits (John Wiley & Sons, 1986)Google Scholar
[2] Holmes-Siedle, A., Nucl.Inst.Meth., 121, p169 (1974)CrossRefGoogle Scholar
[3] Holmes-Siedle, A. & Adams, L., Radiat.Phys.Chem., 28 (2), p235 (1986)Google Scholar
[4] Adams, L. & Holmes-Siedle, A., IEEE Trans.Nud.Sci., NS–25 (6), p1607 (1978)CrossRefGoogle Scholar
[5[ Holmes-Siedle, A., Adams, L., Leffler, S. & Lindgren, S.R., 7th Annual ASTM-EURATOM Symposium on Reactor Dosimetry, Aug 27 31, 1990, Strasbourg, France Google Scholar
[6] Hughes, R.C., Huffman, D., Snelling, J.V., Zipperian, T.E., Ricco, Aj. & Kelsey, C.A., Intj.Radiation Oncology Biol.Phys., 14, p963 (1988)CrossRefGoogle Scholar
[7] Dawes, W.R., McLean, F.B., Robinson, P.A. & Silver, J.J., Hardening semiconductor components against radiation and temperature (Noyes Data Corporation, 1989)Google Scholar
[8] Sarrabayrouse, G., Bellaouar, A. & Rossel, P., Revue Phys.Appl., 21, p283 (1986)CrossRefGoogle Scholar
[9] Sarrabayrouse, G., Proceedings of the RADECS Conference, September 9-12, 1991, Montpellier, FranceGoogle Scholar
[10] Shoucair, F., Hwang, W. & Jain, P., Microelectron.Reliab., 24 (3), p465 (1984)CrossRefGoogle Scholar
[11] O'Sullivan, M., Kelleher, A., Ryan, J., O'Neill, B. & Lane, B., Proceedings of the ESA Electronic Components Conference, ESTEC, November 12-16, 1990, Noordwijk, The Netherlands Google Scholar
[12] Dressendorfer, P.V., Soden, J.M., Harrington, J.J. & Nordstrom, T.V., IEEE Trans.Nucl.Sci., NS–28 (6), p4281 (1981)CrossRefGoogle Scholar