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Morphology and Microstructure of (111) Crystalline CeO2 Films Grown on Amorphous SiO2 Substrates by Pulsed-Laser Ablation

Published online by Cambridge University Press:  21 February 2011

S. Zhu ,
Douglas H. Lowndes ,
J.D. Budai ,
T. Thundat ,
D.P. Norton  and
R.J. Warmack
S. Zhu
Affiliation:
Solid State Division, MS-6056
Douglas H. Lowndes
Affiliation:
Solid State Division, MS-6056
J.D. Budai
Affiliation:
Solid State Division, MS-6056
T. Thundat
Affiliation:
Health Sciences Research Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831–6056;
D.P. Norton
Affiliation:
Solid State Division, MS-6056
R.J. Warmack
Affiliation:
Health Sciences Research Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831–6056;
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Abstract

The surface morphology and microstructure of (lll)-oriented CeO2 thin films, grown on amorphous fused silica (S1O2) substrates by low-energy-ion-beam assisted pulsed laser ablation, have been studied by atomic force microscopy (AFM) and x-ray diffraction (XRD). These CeO2 films are aligned with respect to a single in-plane axis despite being deposited on an amorphous substrate. There is a honeycomb-like growth morphology to the films and island-growth can be observed in thicker films. These islands, inside of which are high density of honeycomb-like clusters, are separated by a void network with ∼700nm width. However, on the surface of the thinnest film (∼3nm), only very small clusters (diameter <60nm) appear, and the boundaries of the void network are undefined, which implies that the film is just beginning to coalesce into clusters (grains). The combined AFM images and XRD pattern suggest these clusters probably are the initial seeds for the subsequent island growth. Based on these results, the growth mechanism of oriented CeO2 films on amorphous fused silica substrates is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 603
Copyright
Copyright © Materials Research Society 1995

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References

1 Harper, J.M.E., Cuomo, J.J., and Gambino, R.J., in Ion Bomvardment Modification of Surfaces: Fundamentals and Applications, edited by Auciello, O. and Kelly, R. (Elsevier, Amsterdam, 1984), and references therein.Google Scholar
2 Weissmantel, C., Thin Solid Films 32, 11 (1976).Google Scholar
3 Iijima, Y., Tanabe, N., Kohno, O., and Ikeno, Y., Appl. Phys. Lett. 60, 769 (1992).Google Scholar
4 Reade, R.P., Berdahl, P., Russo, R.E., and Garrison, S.M., Appl. Phys. Lett. 61, 2231 (1992).Google Scholar
5 Zhu, S., Lowndes, D.H., Budai, J.D., and Norton, D.P., Appl. Phys. Lett. 65, 2012 (1994).Google Scholar
6 Wu, X.D., Foltyn, S.R., Arendt, P., Townsend, J., Adams, C., Compbell, I.H., Tiwari, P., Coulter, Y., and Peterson, D.E., Appl. Phys. Lett. 65, 1961 (1994).Google Scholar
7 Chatterjee, R., Fudutomi, M., Aoki, S., Togano, K., and Maeda, H., Appl. Phys. Lett. 65, 109 (1994).Google Scholar
8 Müller, K-H., J. Vac. Sei. Technol. A 4, 184 (1986).Google Scholar
9 Thornton, J.A., J. Vac. Sei. Technol. A 6, 3059 (1986).Google Scholar
10 Messier, R., Giri, A.P., and Roy, R.A., J. Vac. Sei. Technol. A 2, 500 (1984).Google Scholar
11 Mayer, T.M., Chason, E., and Howard, A.J., J. Appl. Phys. 76, 1633 (1994).Google Scholar
12 Snoeks, E., Polman, A., and Volkert, C.A., Appl. Phys. Lett. 65, 2487 (1994).Google Scholar
13 Superconductive Components, Inc., Columbus, OH.Google Scholar
14 Ion Tech., Inc., Ft. Collins, CO.R.M. Bradley, p. 300 in Handbook of Ion Beam Processing Technology, ed. by Cuomo, J.J., Rossnagel, S.M., and Kaufman, H.R., Noyes Publications, Park Ridge, NJ, 1989.Google Scholar
16 Girard, J.C., Samson, Y., Gauthier, S., Rousset, S., and Klein, J., Surface Science 302, 73 (1994).Google Scholar
17 Okuno, S.N., Hashimoto, S., and Inomata, D., J. Appl. Phys. 71, 5926 (1994).Google Scholar
18 Zalm, P.C., p. 78 in Handbook of Ion Beam Processing Technology, ed. by Cuomo, J.J., Rossnagel, S.M., and Kaufman, H.R., Noyes Publications, Park Ridge, NJ, 1989.Google Scholar
19 Kester, D. and Messier, R., J. Mater. Res. 8, 1938 (1993).Google Scholar