Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-02T22:59:01.094Z Has data issue: false hasContentIssue false
  • English
  • Français

Monte Carlo Simulation of Growth of Crystalline and Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

Brian W. Dodson  and
Paul A. Taylor
Brian W. Dodson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Paul A. Taylor
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Get access

Abstract

The authors have previously introduced a method, based on Monte Carlo techniques, for simulation of crystal growth processes in a continuous space. We have applied the method, initially used to simulate growth of two-dimensional Lennard-Jones systems, to treat growth of silicon in three dimensions. The interaction model for silicon is taken to be the recently introduced Stillinger-Weber (S-W) potential, which is a two- and threebody classical potential. Although the early stages of growth seem to be well modelled by the S-W potential, growth of even a single monolayer of epitaxial (111) silicon does not seem to be possible. Modifications to the S-W potential were considered, and found to be unacceptable physically. More accurate treatment of non-ideal atomic configuration energies is necessary to arrive at physically realistic growth simulations.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 63: Symposium R – Computer-Based Microscopic Description of the Structure and Properties of Materials , 1985 , 151
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Osbourn, G.C., J Appl Phys 53, 1586 (1982).Google Scholar
2. Dodson, B.W., submitted to Phys Rev B.Google Scholar
3. Dodson, B.W., in Layered Structures, Epitaxy, and Interfaces, Gibson, J.M. and Dawson, L.R. eds. (MRS, Pittsburgh, 1985).Google Scholar
4. Stillinger, F.H. and Weber, T.A., Phys Rev B 31, 5262 (1985).Google Scholar
5. See, for example, Muller-Krumbhaar, H., in Monte Carlo Methods in Statistical Physics, Binder, K., ed. (Springer, New York, 1979).Google Scholar
6. Hill, T.L., J Chem Phys 15, 761 (1947).Google Scholar
7. Binder, K., op cit.Google Scholar
8. Harrison, W.A., Electronic Structure and the Properties of Solids. (Freeman, San Francisco, 1980).Google Scholar
9. Lander, J.J. and Morrison, J., Surf Sci 2, 553 (1964).CrossRefGoogle Scholar