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Modelling the Multiplicity of Conductance Structures in Clusters of Silicon Quantum Dots

Published online by Cambridge University Press:  28 February 2011

D. W. Boeringer  and
R. Tsu
D. W. Boeringer
Affiliation:
University of North Carolina at Charlotte, Charlotte, NC 28223
R. Tsu
Affiliation:
University of North Carolina at Charlotte, Charlotte, NC 28223
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Abstract

We have fabricated diode structures containing clusters of nanoscale silicon particles. The modelling of the observed multiple current steps from resonant tunnelling through the quantum states of these particles is presented. Whenever the applied voltage aligns the Fermi surface of the contact to a discrete state, conduction results. Since the clusters are connected in parallel, successive connections of parallel current paths can cause multiple current steps. These current steps can be drastically amplified by avalanche multiplication when the substrate is deeply depleted. The transport in this regime is quite nonlinear, and cannot be represented by a linear equivalent circuit. Apart from gaining a fundamental understanding of the measured I-V characteristics of our diodes, our results serve to promote new applications for quantum switches.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 569
Copyright
Copyright © Materials Research Society 1995

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References

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