Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-24T09:30:06.073Z Has data issue: false hasContentIssue false
  • English
  • Français

Modeling Ultra Shallow Junctions Formed by Phosphorus-Carbon and Boron-Carbon Co-implantation

Published online by Cambridge University Press:  21 April 2011

Christoph Zechner ,
Dmitri Matveev ,
Nikolas Zographos ,
Victor Moroz  and
Bartek Pawlak
Christoph Zechner
Affiliation:
Synopsys Switzerland LLC, Affolternstrasse 52, Zurich, CH-8050, Switzerland
Dmitri Matveev
Affiliation:
Synopsys Switzerland LLC, Affolternstrasse 52, Zurich, CH-8050, Switzerland
Nikolas Zographos
Affiliation:
Synopsys Switzerland LLC, Affolternstrasse 52, Zurich, CH-8050, Switzerland
Victor Moroz
Affiliation:
Synopsys, Incorporated, 700 East Middlefield Road, Mountain View, CA, 94043
Bartek Pawlak
Affiliation:
NXP Semiconductors, Kapeldreef 75, Leuven, B-3001, Belgium
Get access

Abstract

A new carbon-interstitial clustering model has been developed. The model has been implemented into the process simulator Sentaurus Process. Model parameters have been calibrated using fundamental marker layer experiments. B diffusion retardation in the C doped layer as well as Sb diffusion enhancement in the region close to a layer with high C concentration are successfully simulated. The calibrated model has been applied to simulations of ultra-shallow junction formation by high dose P-C and B-C co-implantation. It is assumed that, in regions which are amorphized by ion implantation and recrystallized by solid phase epitaxy, C is in the substitutional state right after the recrystallization. In contrast, in non-amorphized regions, C is assumed to be in clusters at the beginning of thermal annealing. A good agreement between simulation and experimental results has been achieved. The dependence of dopant diffusion on implanted C dose and spike annealing temperature has been reproduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F11-17
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Pawlak, B.J., Janssens, T., Brijs, B., Vandervorst, W., Felch, S.B., Collart, E.J.H., Cowern, N.E.B., Appl. Phys. Lett. 89, 062110 (2006)Google Scholar
2. Pawlak, B.J., Duffy, R., Janssens, T., Wandervorst, W., Felch, S.B., Collart, E.J.H., Cowern, N.E.B., Appl. Phys. Lett. 89, 062102 (2006)Google Scholar
3. Moroz, V., Oh, Y.-S., Pramanik, D., Graoui, H., Foad, M., Appl. Phys. Lett. 87, 051908 (2005)Google Scholar
4. Colombeau, B. and Cowern, N.E.B, Semiconductor Science and Technology 19, 1339 (2004)Google Scholar
5. Pichler, P., fiIntrinsic Point Defects, Impurities and Their Diffusion in Siliconfl, Springer 2004, Vienna Google Scholar
6. Laveant, P., PhD thesis, MPI, Germany, 2002 Google Scholar
7. Sentaurus Process User Manual, Synopsys Inc., June 2006 Google Scholar
8. Ruecker, H., Heinemann, B., Ropke, W., Kurps, R., Kruger, D., Appl. Phys. Lett. 73, 1682 (1998)Google Scholar
9. Advanced Calibration User Manual, Synopsys Inc., June 2006 Google Scholar
10. Duffy, R., Venezia, V.C., Heringa, A., Pawlak, B.J., Hopstaken, M.J.P., Maas, G.C.J., Tamminga, Y., Dao, T., Roozeboom, F., Pelaz, L., Appl. Phys. Lett. 84, 4283 (2004)Google Scholar