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MOCVD of Ferroelectric Pb(Zr,Ti)O3 and (Pb,La)(Zr,Ti)O3 Thin Films for Memory Device Applications

Published online by Cambridge University Press:  15 February 2011

Masaru Shimizu  and
Tadashi Shiosaki
Masaru Shimizu
Affiliation:
Department of Electronics, Faculty of Engineering, Kyoto University Yoshida Honmachi, Sakyo-ku, Kyoto 606, Japan
Tadashi Shiosaki
Affiliation:
Department of Electronics, Faculty of Engineering, Kyoto University Yoshida Honmachi, Sakyo-ku, Kyoto 606, Japan
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Abstract

The advantages of MOCVD for the growth of Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3(PLZT) thin films were discussed, with emphasis on the controllability of film composition, crystalline structure and electrical properties. The possibilities of lowering the processing temperature and scaling up the process to commercial-based production were investigated. The preparation of PZT films and electrodes with a specific focus on improving the I-V and fatigue characteristics was also investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 295
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Shimizu, M., Hayashi, K., Katayama, T. and Shiosaki, T., Proc. 8th Int. Symp. Applications of Ferroelectrics, Greenville, 1992, p. 428.Google Scholar
2. Shimizu, M., Fhjisawa, H., Sugiyama, M. and Shiosaki, T., Jpn. J. Appl. Phys., 33, 5135 (1994).Google Scholar
3. Shimizu, M., Fujimoto, M., Katayama, T., Shiosaki, T., Nakaya, K., Fukagawa, M. and Tanikawa, E., Mat. Res. Soc. Proc, 310, 255 (1993).Google Scholar
4. Shiosaki, T., Fujimoto, M., Shimizu, M., Fukagawa, M., Nakaya, K. and Tanikawa, E., Integrated Ferroelectrics, 5, 39 (1994).Google Scholar
5. Shimizu, M., Sugiyama, M., Fujisawa, H., Hamano, T., Shiosaki, T. and Matsushige, K., J. Cryst. Growth, 145, 226 (1994).Google Scholar
6. Kashihara, K., Okudaira, T., Itoh, H., Higaki, T. and Abe, H., 1993 Symp. VLSI Technology Dig. of Tech. Pap., 4B-4(1993)p. 49.Google Scholar
7. Kanno, I., Hayashi, S., Kamada, T., Kitagawa, M. and Hirao, T., Jpn. J. Appl. Phys., 32, 4057 (1993).Google Scholar
8. Shimizu, M., Sugiyama, M., Fujisawa, H. and Shiosaki, T., Jpn. J. Appl. Phys., 33, 5167 (1994).Google Scholar
9. Aoki, K., Fukuda, Y., Numata, K. and Nishimura, A., Jpn. J. Appl. Phys., 33, 5155 (1994).Google Scholar
10. Sakashita, Y., Ono, T., Segawa, H., Tominaga, K. and Okada, M., J. Appl. Phys., 69, 8352 (1991).Google Scholar
11. Hayashi, S., Iijima, K. and Hirao, T. in Ferroelectric Thin Films II, edited by Kingon, A.I., Myers, E.R. and Tuttle, B. (Mat. Res. Soc. Symp. Proc, 243, Pittsburgh, PA, 1992) pp. 155–166.Google Scholar
12. De Keijer, M., Van Veldhoven, P.J. and Dormans, G.J.M. in Ferroelectric Thin Films III, edited by Myers, E.R., Tuttle, B.A., Desu, S.B. and Larsen, P.K. (Mat. Res. Soc. Symp. Proc., 310, Pittsburgh, PA, 1993)pp. 223–234.Google Scholar
13. Shimizu, M., Sugiyama, M., Fujisawa, H. and Shiosaki, T., to be published in Proc. 6th Int. Symp. Integrated Ferroelectrics, Monterey, 1994.Google Scholar
14. Shimizu, M., Katayama, T., Sugiyama, M. and Shiosaki, T., Jpn. J. Appl. Phys., 32, 4074 (1994).Google Scholar
15. Shiosaki, T., Kang, C.S., Shimizu, M., Fukagawa, M., Nakaya, K. and Tanikawa, E., in Ceramic Transactions, 43, (1994)p. 27.Google Scholar
16. Matsuno, S., Uchikawa, F. and Yoshizaki, K., Jpn. J. Appl. Phys., 29, L947 (1990).Google Scholar
17. Kawahara, T., Yamamuka, M., Makita, T., Naka, J., Yuuki, A., Mikami, N. and Ono, K., Jpn. J. Appl. Phys., 33, 5129 (1994).Google Scholar
18. Kirlin, P., Bilodeau, S., Van Buskirk, P., to be published in Proc. 6th Int. Symp. Integrated Ferroelectrics, Monterey, 1994.Google Scholar
19. Nakamura, T., Nakao, Y., Kamisawa, A. and Takasu, H., Appl. Phys. Lett., 65, 1522 (1994).Google Scholar
20. Nakamura, T., Nakao, Y., Kamisawa, A. and Takasu, H., Jpn. J. Appl. Phys., 33, 5207 (1994).Google Scholar