Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-28T22:22:55.135Z Has data issue: false hasContentIssue false
  • English
  • Français

Misfit dislocations in green-emitting InGaN/GaN quantum well structures

Published online by Cambridge University Press:  01 February 2011

Pedro MFJ Costa ,
Ranjan Datta ,
Menno J Kappers ,
Mary E Vickers  and
Colin J Humphreys
Pedro MFJ Costa
Affiliation:
[email protected], University of Cambridge, Materials Science and Metallurgy, Pembroke Street, Cambridge, N/A, CB2 3QZ, United Kingdom
Ranjan Datta
Affiliation:
[email protected], University of Cambridge, Department of Materials Science and Metallurgy, United Kingdom
Menno J Kappers
Affiliation:
[email protected], University of Cambridge, Department of Materials Science and Metallurgy, United Kingdom
Mary E Vickers
Affiliation:
[email protected], University of Cambridge, Department of Materials Science and Metallurgy, United Kingdom
Colin J Humphreys
Affiliation:
[email protected], University of Cambridge, Department of Materials Science and Metallurgy, United Kingdom
Get access

Abstract

Misfit dislocations (MDs) have been observed using transmission electron microscopy (TEM) in InGaN/GaN quantum well (MQW) structures grown under different metal-organic vapour phase epitaxy (MOVPE) regimes and with In-contents equal to or higher than 20%. These dislocations are even observed in a single quantum well 3 nm thick with an In-content of 22%. Conversely, no MDs were observed in QW structures with an In-content of 16%. The presence of MDs in the QW stack leads to strain relaxation which has been confirmed in the indium-rich structures by high resolution X-ray diffraction (HRXRD).

Keywords

III-Vtransmission electron microscopy (TEM)dislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF25-01
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ponce, F. A., Bour, D. P. Nature 1997, 386, 351–359.CrossRefGoogle Scholar
[2] Cherns, D., Henley, S. J., Ponce, F. A. Applied Physics Letters 2001, 78, 2691–2693.CrossRefGoogle Scholar
[3] Fischer, A., Kuhne, H., Richter, H. Physical Review Letters 1994, 73, 2712–2715.CrossRefGoogle Scholar
[4] People, R., Bean, J. C. Applied Physics Letters 1985, 47, 322–324.CrossRefGoogle Scholar
[5] Matthews, J. W., Blakeslee, A. E. Journal of Crystal Growth 1974, 27, 118–125.Google Scholar
[6] Datta, R., Kappers, M.J., Vickers, M.E., Barnard, J.S., Humphreys, C. J., Superlattices and Microstructures 2004, 36, 393–401.CrossRefGoogle Scholar
[7] Vickers, M. E., Kappers, M. J., Smeeton, T. M., Thrush, E. J., Barnard, J. S., Humphreys, C. J. Journal of Applied Physics 2003, 94, 1565–1574.CrossRefGoogle Scholar
[8] Cho, H. K., Lee, J. Y., Yang, G. M., Kim, C. S. Applied Physics Letters 2001, 79, 215–217.CrossRefGoogle Scholar
[9] Lu, W., Li, D. B., Li, C. R., Zhang, Z. Journal of Applied Physics 2004, 96, 5267–5270.CrossRefGoogle Scholar
[10] Van Daele, B., Van Tendeloo, G., Jacobs, K., Moerman, I., Leys, M. R. Applied Physics Letters 2004, 85, 4379–4381.CrossRefGoogle Scholar