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Millisecond Annealing: Past, Present and Future

Published online by Cambridge University Press:  01 February 2011

Paul Timans ,
Jeff Gelpey ,
Steve McCoy ,
Wilfried Lerch  and
Silke Paul
Paul Timans
Affiliation:
[email protected], Mattson Technology, Inc., Technology, 47131 Bayside Parkway, Fremont, 94538, United States
Jeff Gelpey
Affiliation:
[email protected], Mattson Technology Canada, Inc., 605 West Kent Avenue, Vancouver, V6P 6T7, Canada
Steve McCoy
Affiliation:
[email protected], Mattson Technology Canada, Inc., 605 West Kent Avenue, Vancouver, V6P 6T7, Canada
Wilfried Lerch
Affiliation:
[email protected], Mattson Thermal Products GmbH, 10 Daimlerstrasse, Dornstadt, N/A, 89160, Germany
Silke Paul
Affiliation:
[email protected], Mattson Thermal Products GmbH, 10 Daimlerstrasse, Dornstadt, N/A, 89160, Germany
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Abstract

The challenge of achieving maximal dopant activation with minimal diffusion has re-awakened interest in millisecond-duration annealing processes, almost two decades after the initial research in this field. Millisecond annealing with pulsed flash-lamps or scanned energy beams can create very shallow and abrupt junctions with high concentrations of electrically active carriers, but solutions for volume manufacturing must also meet formidable process control requirements and economic metrics. The repeatability and uniformity of the temperature cycle is the key for viable manufacturing technology, and the lessons from the development of commercial rapid thermal processing (RTP) tools are especially relevant. Advances in the process capability require a fuller understanding of the trade-off between dopant activation, defect annealing. diffusion and deactivation phenomena. There is a strong need for a significant expansion of materials science research into the fundamental physical processes that occur at the short time scales and high temperatures provided by millisecond annealing.

Keywords

ion-implantationannealingSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C01-01
Copyright
Copyright © Materials Research Society 2006

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