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Microwave Responce from La- and Dy- doped BiFeO3 Thin Films

Published online by Cambridge University Press:  26 February 2011

Peter Kr. Petrov ,
Vaijayanti R Palkar ,
Neil McN Alford ,
Alexander K Tagantsev ,
K Prashanthi ,
Hsin-I Chien ,
Anna-Karin Axelsson  and
S Bhattacharya
Peter Kr. Petrov
Affiliation:
[email protected], London South Bank University, Centre for Physical Electronics and Materials, 103 Borough Road, London, SE1 0AA, United Kingdom, +442078157540
Vaijayanti R Palkar
Affiliation:
[email protected], Tata Institute of Fundamental Reasearch, Mumbai, 400005, India
Neil McN Alford
Affiliation:
[email protected], London South Bank University, London, SE1 0AA, United Kingdom
Alexander K Tagantsev
Affiliation:
[email protected], EPFL, Lausanne, CH-1015, Switzerland
K Prashanthi
Affiliation:
[email protected], Indian Institute of Technology Bombay, Mumbai, 400076, India
Hsin-I Chien
Affiliation:
[email protected], London South Bank University, London, SE1 0AA, United Kingdom
Anna-Karin Axelsson
Affiliation:
[email protected], London South Bank University, London, SE1 0AA, United Kingdom
S Bhattacharya
Affiliation:
[email protected], Tata Institute of Fundamental Reasearch, Mumbai, 400005, India
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Abstract

The dielectric response of La- and Dy- doped BiFeO3 thin films to electric- and magnetic fields was measured at microwave frequencies (up to 12GHz) in a temperature range from 25 °C to 300 °C. Interesting phenomena were observed. Significant oscillations in the C(f) characteristic which were unaffected by the electric field or by elevated temperature but which were dampened by a magnetic field. We also observed ‘N’-type I-V characteristics. A possible explanation for this mesoscopic response is the presence of structural features that cause resonance (e.g. grains, grain-boundaries, domains, domain walls etc), with a contribution strong enough to be averaged by the system. The exact origin of these features is unknown at present.

Keywords

dielectric propertiesmagnetic propertiesthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 966: Symposium T – Ferroelectrics and Multiferroics , 2006 , 0966-T05-08
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Smolenski, G.A., Sov. Phys. Usp. 25, 475 (1982).Google Scholar
2. Palkar, V.R., John, J., and Pinto, R., Appl. Phys. Lett. 80(9), 1628 (2002).Google Scholar
3. Shetty, S., Palkar, V.R. and Pinto, R., PRAMANA-J. Phys. 58, 1027 (2002).Google Scholar
4. Lee, D., Kim, M.G., Ryu, S., Jang, H.M. and Lee, S.G, Appl. Phys. Lett. 86, 222903 (2005).Google Scholar
5. Petrov, PK, Alford, N. McN., and Gevorgyan, S., Meas. Sci. Technol. 16, 583 (2005).Google Scholar
6. Spivak, B., Zhou, F., Monod, MT Beal,: Phys Rev B Condens Matter. 51(19), 13226 (1995).Google Scholar