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Micro-uniformity during laser anneal : metrology and physics

Published online by Cambridge University Press:  01 February 2011

W. Vandervorst ,
E. Rosseel ,
R. Lin ,
D. H. Petersen ,
T. Clarysse ,
J. Goossens ,
P. F. Nielsen  and
K. Churton
W. Vandervorst
Affiliation:
IMEC, AMPS, Kapeldreef 75, Leuven, B-3001, Belgium, ++32-16-288197, ++32-16-281214
E. Rosseel
Affiliation:
[email protected], Kapeldreef 75, Leuven, B3001, Belgium
R. Lin
Affiliation:
[email protected], CAPRES A/S, Scion-DTU, Building 373, Kgs. Lyngby, DK-2800, Denmark
D. H. Petersen
Affiliation:
[email protected], Technical University of Denmark, DTU Nanotech, Dept. of Micro-and Nanotechnology, Building 345 East, Kgs. Lyngby, DK-2800, Denmark
T. Clarysse
Affiliation:
[email protected], IMEC, Kapeldreef 75, Leuven, B3001, Belgium
J. Goossens
Affiliation:
[email protected], IMEC, Kapeldreef 75, Leuven, B3001, Belgium
P. F. Nielsen
Affiliation:
[email protected], CAPRES A/S, Scion-DTU, Building 373, Kgs. Lyngby, DK-2800, Denmark
K. Churton
Affiliation:
[email protected], Applied Materials, 974 East Arques Avenue, Sunnyvale, CA, 94085, United States
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Abstract

Maintaining or improving device performance while scaling semiconductor devices, necessitates the development of extremely shallow (< 20 nm) source/drain extensions with a very high dopant concentration and electrical activation level. Whereas solutions based on RTA with cocktail implants have been proposed in previous generations, sub-45 nm technologies will require even shallower junctions which motivates the research effort on milli-second anneal approaches as these hold the promise of minimal diffusion coupled with high activation levels [1]. Laser annealing is one of these concepts proposed to achieve the junction specifications and is typically described as a msec anneal process. Different from lamp based concepts which illuminate a full wafer simultaneously, the laser has an illuminated area which is much smaller than the wafer size thus necessitating a dedicated scanning pattern. In such a case one is potentially faced with areas subject to multiple overlaps and/or different temperatures and thus issues related to within wafer and within die uniformity need to be addressed.

In this work we use optimized metrology to probe such macro- and micro non-uniformity and determine the origin of the various components contributing to the observed non-uniformity patterns (laser stitching patterns, laser beam uniformity, optical path) and their impact on the local sheet resistance.

Keywords

laser annealingSimicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E01-10
Copyright
Copyright © Materials Research Society 2008

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References

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