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Microstructure Investigations and Structure-Property Correlations in Ferroelectric thin film Capacitors

Published online by Cambridge University Press:  10 February 2011

H. Li ,
B. Yang ,
A. Dhote ,
S. Aggarwal ,
L. Salamanca-Riba  and
R. Ramesh
H. Li
Affiliation:
Dept. of Materials & Nuclear Eng., Uni. of Maryland, College Park, MD 20742, Email: [email protected]
B. Yang
Affiliation:
Dept. of Materials & Nuclear Eng., Uni. of Maryland, College Park, MD 20742
A. Dhote
Affiliation:
Dept. of Materials & Nuclear Eng., Uni. of Maryland, College Park, MD 20742
S. Aggarwal
Affiliation:
Dept. of Materials & Nuclear Eng., Uni. of Maryland, College Park, MD 20742
L. Salamanca-Riba
Affiliation:
Dept. of Materials & Nuclear Eng., Uni. of Maryland, College Park, MD 20742
R. Ramesh
Affiliation:
Dept. of Materials & Nuclear Eng., Uni. of Maryland, College Park, MD 20742
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Abstract

Epitaxial 0%, 3% and 10% La doped PZT capacitors with a LSCO bottom electrode grown by pulsed laser deposition on Si using a Ti(Al)N/Pt conducting barrier layer were systematically studied. Ferroelectric capacitors substituted with 10% La show a significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to the systematic variation of the domain structure of the PLZT film with the increase of La concentration. The in-plane orientation relationship of this heterostructure is: [110]PLZT/[110]LSCO/[110]Pt/[110]Ti(AI)N[110]si. The morphology of the domains as a function of La concentration was studied using high resolution transmission electron microscopy(HREM). The Pt/Ti(Al)N conducting barrier layer stack is intact after the deposition of the LSCO/PLZT/LSCO stack. All Ti(Al)N layers in the samples studied consist of column-like structures with a [110] texture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 171
Copyright
Copyright © Materials Research Society 1998

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References

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