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Microstructure and Electrical Properties of PbTe Based Films Prepared by Pulsed Laser Deposition
Published online by Cambridge University Press: 21 March 2011
Abstract
Lead telluride thin films have been grown on BaF2(111) substrates by pulsed laser deposition from a Nd:YAG laser (λ = 532 nm) at very low temperature (150°C). The chemical composition, the morphology and the crystallographic structure of the layers depend strongly on the deposition conditions. Post-annealing treatments of the films also affect their microstructure. Preliminary electrical properties, conducted in the temperature range of 5 to 350 K, revealed that all the samples were n-type with Hall mobility values greater than 104 cm2/V.s at low temperatures.
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- Copyright © Materials Research Society 2002
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