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Microstructural and Electrical Properties of La Doped Ba1划xSrxTiO3 Thin Films For Tunable Microwave Device Applications

Published online by Cambridge University Press:  21 March 2011

M.W. Cole
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A
P.C. Joshi
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A
E. Ngo
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A
C.W. Hubbard
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A
U. Lee
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A
M.H. Ervin
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A
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Abstract

We have investigated the structural, compositional, interfacial, surface morphological and dielectric properties of Ba0.6Sr0.4TiO3 solid solution thin films La doped from 0 to 10 mol%. The doped thin films were prepared by the metalorganic solution deposition technique using carboxylate-alkoxide precursors. After post-deposition annealing in oxygen ambient at 750 °C the films were characterized via x-ray diffraction, Auger electron microscopy, field emission scanning electron microscopy, and atomic force microscopy. The electrical measurements were achieved in the metal-insulator-metal (MIM) configuration with Pt as the top and bottom electrode. Our results demonstrated that La doping had a strong effect on the films microstructural, dielectric and insulating properties. Specifically, 1 mol% La doped BST films exhibited a lower dielectric constant, 283 and higher resistivity 31.4×1013 W-cm with respect to that of undoped BST. The loss tangent and tunability (at 100 kHz) of the 1 mol% La doped BST films were 0.019 and 21% (at E=300kV/cm) respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

1. Knauss, L.A., Pond, J.M., Horwitz, S.J., Chrisey, D.B., Appl. Phys. Lett., 69, 25 (1992).Google Scholar
2. Cole, M.W., Joshi, P.C., Ervin, M.H., Wood, M.C., Pfeffer, R.L., Thin Solid Films, 374, 34 (2000).Google Scholar
3. Joshi, P.C., Cole, M.W., Appl. Phys. Lett.,77, 289 (2000).Google Scholar
4. Patel, D. P., Radar Division, NavelResearch Laboratory, Washington DC, USA, private communication.Google Scholar
5. Xu, Y., Ferroelectric Materials and Their Applications, North Holland, New York, NY (1991)Google Scholar
6. Weston, U.N., J. Am. Ceramic Soc., 52, 253 (1969).Google Scholar
7. Varadan, V.K., Ghodgaonkar, D.K., Varadan, V.V., Microwave J., 30, 116 (1992).Google Scholar