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Microcrystalline SiO and its Application to Solar Cell

Published online by Cambridge University Press:  26 February 2011

Channarong Piromjit ,
Decha Yotsaksri ,
Nirut Pingate  and
Porponth Sichanugrist
Channarong Piromjit
Affiliation:
[email protected], ISET, NSTDA, ISET,NSTDA, Klong 1, Klong Luang, Pathumthani, 12120 Thailand, Phathumthani, 12120, Thailand
Decha Yotsaksri
Affiliation:
[email protected], Nationnal Science and Technology Development Agency, 111 Thailand Science Park, Paholyothin Rd., Klong Luang,, Pathumthani, 12120, Thailand
Nirut Pingate
Affiliation:
[email protected], Nationnal Science and Technology Development Agency, 111 Thailand Science Park, Paholyothin Rd., Klong Luang,, Pathumthani, 12120, Thailand
Porponth Sichanugrist
Affiliation:
[email protected], Nationnal Science and Technology Development Agency, 111 Thailand Science Park, Paholyothin Rd., Klong Luang,, Pathumthani, 12120, Thailand
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Abstract

As microcrystalline silicon oxide (μc-SiO) is reported to be more promising material than microcrystalline silicon carbide for the application to solar cells, both of high efficiency amorphous (top cell) and microcrystalline (bottom cell) silicon solar cells fabricated on tin oxide coated glass substrate have been developed by using μc-SiO p-layer and buffer i-layer. High VHF frequency of 60 MHz and carbon dioxide gas are used for their deposition. ZnO deposited by DC sputtering is coated on Asahi's type U tin oxide in order to promote the crystallization of the μc-SiO p-layer. It was found that the top cell with this novel mc-SiO p-layer has higher cell efficiency than the one with normal SiO p-layer. Furthermore, the microcrystalline bottom cell with novel μc-SiO p-layer and μc-SiO buffer layer has higher performance than the one with normal μc-Si p-layer. Up to now, an efficiency of more than 15% has been achieved with a-SiO/a-SiGe/μc-Si tandem cell.

Keywords

plasma-enhanced CVD (PECVD) (deposition)Sithin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 974: Symposium CC – Solar Energy Conversion , 2006 , 0974-CC10-28
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Sichanugrist, P., Sasaki, T., Sano, A., Ichikawa, Y. and Sakai, H., Solar Energy Materials & Solar Cells 34, 415 (1994).10.1016/0927-0248(94)90068-XGoogle Scholar
2. Hanaki, K., Hattori, T. and Hamakawa, Y., Technical Digest of the International PVSEC-3, Tokyo, (1987)(unpublished).Google Scholar
3. Saneyuki, G., Nakano, Y. and Yamashita, N., Technical Digest of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, (2003)(unpublished).Google Scholar