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Metal Organic Chemical Vapor Deposition of Al and CuAl Alloy Films in a Vertical, High-Speed, Rotating Disk Reactor

Published online by Cambridge University Press:  22 February 2011

G. S. Tompa ,
E. Wolak ,
R. A. Stall ,
M. A. George ,
M. Lippitt  and
John A.T. Norman
G. S. Tompa
Affiliation:
EMCORE Corporation, Somerset, NJ, 07030.
E. Wolak
Affiliation:
EMCORE Corporation, Somerset, NJ, 07030.
R. A. Stall
Affiliation:
EMCORE Corporation, Somerset, NJ, 07030.
M. A. George
Affiliation:
Air Products and Chemicals Inc., Allentown, PA 18195
M. Lippitt
Affiliation:
Harris Corporation, Palm Bay, FL 32905
John A.T. Norman
Affiliation:
Schumacher, Carlsbad, CA 92009
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Abstract

A vertical high-speed, rotating disk reactor has been used to produce Al and CuAl alloy films on 125 mm diameter Si (100) wafers. Trimethylamine-alane and Cu (hexafluoroacetylacetonate) trimethylvinylsilane (CupraSelect™) were used as metal precursors. Aluminum films were deposited over the temperature range from ∼100 C to 700 C. Aluminum sheet resistance measurements showed the films to have resistance 2 to 3 times that of bulk Al films. CuAl alloy films were deposited sequentially and by codeposition. At 30 Torr, deposition rates as high as 3.7 um/hr, 0.024 um/hr, and 1 um/hr for Al, Cu, and CuAl films, respectively, were demonstrated. Auger analysis showed the deposited films to be free of contaminants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 323
Copyright
Copyright © Materials Research Society 1993

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References

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