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Memory Effect in Simple Cu Nanogap Junction

Published online by Cambridge University Press:  01 February 2011

Hiroshi Suga ,
Masayo Horikawa ,
Hisao Miyazak ,
Shunsuke Odaka ,
Kazuhito Tsukagoshi ,
Tetsuo Shimizu  and
Yasuhisa Naitoh
Hiroshi Suga
Affiliation:
[email protected], National Institute Science and Technology(AIST), Nanosystem Research Institute, Tsukuba, Japan
Masayo Horikawa
Affiliation:
[email protected], National Institute Science and Technology(AIST), Nanosystem Research Institute, Tsukuba, Japan
Hisao Miyazak
Affiliation:
[email protected], National Institute for Materials Science (NIMS), Research Center for Materials Nanoarchitectonics (MANA), Tsukuba, Japan
Shunsuke Odaka
Affiliation:
[email protected], National Institute for Materials Science (NIMS), Research Center for Materials Nanoarchitectonics (MANA), Tsukuba, Japan
Kazuhito Tsukagoshi
Affiliation:
[email protected], National Institute for Materials Science (NIMS), Research Center for Materials Nanoarchitectonics (MANA), Tsukuba, Japan
Tetsuo Shimizu
Affiliation:
[email protected], National Institute Science and Technology(AIST), Nanosystem Research Institute, Tsukuba, Japan
Yasuhisa Naitoh
Affiliation:
[email protected], National Institute Science and Technology(AIST), Nanosystem Research Institute, Tsukuba, Japan
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Abstract

We have investigated the resistance switching effect in Cu nanogap junction. Nanogap structures were created by means of electromigration and their electrical properties were measured in a high vacuum chamber. The measured current-voltage characteristics exhibited a clear negative resistance and memory effect with a large on-off ratio of over 105. The estimation from I-V curves indicates that the resistance switching was caused by the gap size change, which implies that the nanogap switching (NGS) effect also occurs in Cu electrodes, a popular wiring material in an integrated circuit.

Keywords

electromigrationmemorynanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G10-05
Copyright
Copyright © Materials Research Society 2010

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References

1 Naitoh, Y, Horikawa, M, Abe, H, and Shimizu, T, Nanotechnology 17, 5669 (2006).10.1088/0957-4484/17/22/022Google Scholar
2 Furuta, S., Takahashi, T., Naitoh, Y., Horikawa, M., Shimizu, T., and Ono, M., Jap. J. Appl. Phys. 47, 1806 (2008).10.1143/JJAP.47.1806Google Scholar
3 Masuda, Y., Takahashi, T., Furuta, S., Ono, M., Shimizu, T., and Naitoh, Y., Appl. Surf. Sci. 256, 1028 (2009).10.1016/j.apsusc.2009.05.128Google Scholar
4 Li, Y., Sinitskii, A., and Tour, J. M., Nat. Mater. 7, 966 (2008).10.1038/nmat2331Google Scholar
5 Naitoh, Y., Morita, Y., Horikawa, M., Suga, H., and Shimizu, T., Appl. Phys. Express. 1, 103001 (2008).10.1143/APEX.1.103001Google Scholar
6 The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA 2005.Google Scholar
7 Strachanan, D. R., Smith, D. E., Johnston, D. E., Park, T. H., Therien, M. J., Bonnell, D. A., and Johnsonb, A. T., Appl. Phys. Lett. 86, 043109 (2005).Google Scholar
8 Esen, G. and Fuhrer, M. S., Appl. Phys. Lett. 87, 263101 (2005).10.1063/1.2149174Google Scholar
9 Heersche, H., Lientschnig, G., O'Neill, K., Zant, H., and Zandbergen, H., Appl. Phys. Lett. 91, 072107 (2007).10.1063/1.2767149Google Scholar
10 Hadeed, F. O. and Durkan, C., Appl. Phys. Lett. 91, 123120 (2007).10.1063/1.2785982Google Scholar
11 Simmons, G., J. Appl. Phys. 34, 1793 (1963).Google Scholar