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Memory effect in nanostructured Si-rich hafnia films

Published online by Cambridge University Press:  19 November 2013

L. Khomenkova ,
X. Portier ,
F. Gourbilleau  and
A.Slaoui
L. Khomenkova
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, Kyiv 03028, Ukraine
X. Portier
Affiliation:
CIMAP, CEA/CNRS/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen cedex 4, France
F. Gourbilleau
Affiliation:
CIMAP, CEA/CNRS/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen cedex 4, France
A.Slaoui
Affiliation:
ICube, 23 rue du Loess, BP 20 CR, 67037 Strasbourg Cedex 2, France
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Abstract

Microstructral and charge-trap properties of single Hf-silicate dielectric films are presented versus annealing treatment. The as-grown films were found to be homogeneous and amorphous. It is shown that annealing treatment results in the formation of alternated Hf-rich and Si-rich layers. The mechanism responsible for this phenomenon is found to be surface directed spinodal decomposition. The increase of annealing temperature up to 1000-1100°C resulted in the crystallization of Hf-rich phase. The stability of its tetragonal phase caused an enhancement of film permittivity was observed. The evolution of charge trapping properties of the films results in the memory effect which nature was discussed.

Keywords

memory effectSi nanocrystalshafnia oxide
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1617: Symposium 7E – Low-Dimensional Semiconductor Structures , 2013 , pp. 69 - 74
Copyright
Copyright © Materials Research Society 2013 

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References

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