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Mechanisms of Plasma Induced Silicon Deposition and the Control of the Properties of the Deposit

Published online by Cambridge University Press:  26 February 2011

S. Vepřek ,
M. Heintze ,
F.-A. Sarott ,
M. Jurčik-Rajman  and
P. Willmott
S. Vepřek
Affiliation:
Institute of Inorganic Chemistry, University of Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland.
M. Heintze
Affiliation:
Institute of Inorganic Chemistry, University of Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland.
F.-A. Sarott
Affiliation:
Institute of Inorganic Chemistry, University of Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland.
M. Jurčik-Rajman
Affiliation:
Institute of Inorganic Chemistry, University of Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland.
P. Willmott
Affiliation:
Institute of Inorganic Chemistry, University of Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland.
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Abstract

A critical review of the available experimental data obtained under conditions relevant for the deposition of high quality material shows that: 1) The dominant channel of the deposition of microcrystalline silicon (“μc-Si”) is the fragmentation of SiH4 into SiH2 and H2 followed by fast insertion of SiH2 into the surface of the growing film. The rate determining step is the ion induced dehydrogenation of the surface of the growing film. 2) The SiH2 formation followed by fast insertion into another SiH4 forming Si2H6 is the dominant channel of silane decomposition during the deposition of a-Si. Adsorption of disilane at the surface of the growing film followed by its decomposition can explain the experimental data. The published data show that the contribution of the SiH3 radical to the commonly observed growth rates of ≥ 0.1nm/s is negligible.

The plasma parameters which control the deposition of a-Si and c-Si (μc-Si and epi-Si) are identified on the basis of experimental results, and their effect on the crystalline-to-amorphous transition is explained. Ion bombardment at energies below the displacement threshold has beneficial effect on the properties of the deposit as illustrated by electrical conductivity, gas incorporation, optical absorption and light scattering data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 3
Copyright
Copyright © Materials Research Society 1988

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