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MD simulations of near surface void in copper under thermal compression

Published online by Cambridge University Press:  23 April 2012

Aarne S. Pohjonen ,
Flyura Djurabekova  and
Antti Kuronen
Aarne S. Pohjonen
Affiliation:
Helsinki Institute of Physics (HIP), University of Helsinki, P.O. Box 43 FIN-00014, Finland
Flyura Djurabekova
Affiliation:
Helsinki Institute of Physics (HIP), University of Helsinki, P.O. Box 43 FIN-00014, Finland
Antti Kuronen
Affiliation:
Department of Physics, University of Helsinki, P.O. Box 43 FIN-00014
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Abstract

Dislocation mediated mechanism of surface deformation due to localized stress and strain concentration near a void could give an explanation of field enhancement in conditions relevant to the design of rf accelerating structures of the Compact Linear Collider (CLIC). We have performed molecular dynamics simulations of a near surface void in copper under thermal stressing conditions. The von Mises strain was observed to be concentrated near the void surface with the maximum strain concentration factor of 1.9. To observe the activated slip-planes, we exaggerated the compressive stress to the extent that the dislocations were nucleated on the void surface at sites where von Mises strain was largest. Void depth and size were found to affect the dislocation nucleation. The nucleation was easier for larger voids and for voids which were closer to the surface.

Keywords

Cudislocationsnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1411: Symposium EE – Self Organization and Nanoscale Pattern Formation , 2012 , mrsf11-1411-ee09-16
Copyright
Copyright © Materials Research Society 2012

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References

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