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Materials Study of the Competing Group-V Element Incorporation Process in Dilute-Nitride Films

Published online by Cambridge University Press:  31 January 2011

Wendy L. Sarney  and
Stefan P. Svensson
Wendy L. Sarney
Affiliation:
[email protected], U.S. Army Research Laboratory, Sensors & Electron Devices Directorate, Adelphi, Maryland, United States
Stefan P. Svensson
Affiliation:
[email protected], U.S. Army Research Laboratory, Sensors & Electron Devices Directorate, Adelphi, Maryland, United States
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Abstract

The incorporation of small amounts of N into III-V antimonide-containing semiconductor alloys allows a drastic expansion of available wavelengths for infrared (IR) detector applications. Quaternary films containing three group-V elements can be lattice matched to the most prevalent substrates for IR applications, such as InAs, GaAs, and GaSb. It is not trivial to incorporate N while maintaining the high crystalline quality required for IR devices. Current materials characterization studies of dilute-nitride films consisting of more than two group-V elements has yielded conflicting information related to their competing behavior and the extent of N incorporation. Due to challenges related to light-element microanalysis for many characterization techniques, and the small concentrations of N involved, it is difficult to quantify the amount of N incorporated into dilute-nitride films. In this study, we use transmission electron microscopy (TEM), energy-dispersive spectroscopy (EDS), and x-ray diffraction (XRD) to study the incorporation behaviors of the competing group-V elements in InAsSbN films.

Keywords

III-Vtransmission electron microscopy (TEM)N
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I05-24
Copyright
Copyright © Materials Research Society 2010

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References

[1] Kondow, M., Uomi, K., Niwa, A., Kitatani, T., Watahiki, S. and Yazawa, Y., Jpn. J. Appl. Phys. 35, 1273 (1996).Google Scholar
[2] Ashley, T., Burke, T.M., Pryce, G.J., Adams, A.R., Andreev, A., Murdin, B.N., O'Reilly, E.P., Pidgeon, C.R., Solid State Electron. 47 (3), 387 (2003).Google Scholar
[3] Ashley, T., Buckle, L., Smith, G.W., Murdin, B.N., Jefferson, P.H., Louis, F.J., Veal, T.D., McConville, C.F., Infrared Technology and Applications XXXII, Proceedings of the SPIE 6206, 62060L (2006).Google Scholar
[4] Svensson, S.P., Belenky, G., Meyer, J., Shterengas, L. and Vurgaftman, I., submitted to J. Vac. Sci. Technol., B 2009.Google Scholar
[5] Zhuang, Q., Godenir, A.M. R., Krier, A., Lai, K. T., and Haywood, S. K., J. Appl. Phys. 103, 063520 (2008).Google Scholar
[6] Ma, T.C., Lin, Y.T, Lin, H.H., J. Cryst. Growth 310, 2854 (2008).10.1016/j.jcrysgro.2008.02.015Google Scholar
[7] Wicaksono, S.W., Yoon, S.F., Tan, K.H. and Cheah, W.K., J. Cryst. Growth 274, 355 (2005).10.1016/j.jcrysgro.2004.10.050Google Scholar
[8] Zhuang, Q., Godenir, A., Krier, A., Tsai, G., and Lin, H. H., Appl. Phys. Lett. 93, 121903 (2008).Google Scholar
[9] Sun, H.D., Calvez, S., Dawson, M.D., Gupta, J.A., Sproule, G.I., Wu, X., Wasilewski, Z.R., Appl. Phys. Lett. 87, 181908 (2005).Google Scholar
[10] Harmand, J.C., Ungaro, G., Largeau, L., and Roux, G. Le, Appl. Phys. Lett. 77, 2482 (2000).Google Scholar
[11] Volz, K., Gambin, V., Ha, W., Wistey, M., Yuen, H., Bank, S., Harris, J., J. Cryst. Growth 251, 360 (2003).Google Scholar