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Materials Optimization for Silicon Heterojunction Solar Cells Using Spectroscopic Ellipsometry

Published online by Cambridge University Press:  01 February 2011

Dean Levi ,
Eugene Iwanizcko ,
Steve Johnston ,
Qi Wang  and
Howard M Branz
Dean Levi
Affiliation:
[email protected], NREL, Photovoltiacs, 1617 Cole Blvd., Golden, CO, 80401, United States, 303-384-6605
Eugene Iwanizcko
Affiliation:
[email protected], National Renewable Energy Lab, 1617 Cole Blvd., Golden, CO, 80401, United States
Steve Johnston
Affiliation:
[email protected], National Renewable Energy Lab, 1617 Cole Blvd., Golden, CO, 80401, United States
Qi Wang
Affiliation:
[email protected], National Renewable Energy Lab, 1617 Cole Blvd., Golden, CO, 80401, United States
Howard M Branz
Affiliation:
[email protected], National Renewable Energy Lab, 1617 Cole Blvd., Golden, CO, 80401, United States
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Abstract

Our research team has used hot wire chemical vapor deposition (HWCVD) to fabricate silicon heterojunction (SHJ) solar cells on p-type FZ silicon substrates with efficiencies as high as 18.2%. The best cells are deposited on anisotropically-textured (100) silicon substrates where an etching process creates pyramidal facets with (111) crystal faces. Texturing increases Jsc through enhanced light trapping, yet our highest Voc devices are deposited on un-textured (100) substrates. One of the key factors in maximizing the efficiency of our SHJ devices is the process of optimization of the material properties of the 3 - 5 nm thick hydrogenated amorphous silicon (a-Si:H) layers used to create the junction and back contact in these cells. Such optimization is technically challenging because of the difficulty in measuring the properties of extremely thin layers. This difficulty is compounded by the fact that the properties of such amorphous layers are substrate- and thickness-dependent. In this study, we have utilized spectroscopic ellipsometry (SE) and photoconductivity decay to conclude that a-Si:H films grown on (111) substrates are substantially similar to films grown on (100) substrates. In addition, analysis of the substrate temperature dependence of surface roughness evolution reveals a substrate-independent mechanism of surface smoothening with an activation energy of 0.28 eV. Analysis of the substrate temperature dependence of surface passivation reveals a passivation mechanism with an activation energy of 0.63 eV.

Keywords

optical propertiesplasma-enhanced CVD (PECVD) (chemical reaction)surface chemistry
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A24-04
Copyright
Copyright © Materials Research Society 2007

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