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Material and Electrical Characterization of Carbon-Doped Ta2O5 Films for Embedded DRAM Applications

Published online by Cambridge University Press:  21 March 2011

Karen Chu ,
Byeong-Ok Cho ,
Jane P. Chang ,
Mike L. Steigerwald ,
Robert M. Fleming ,
Robert L. Opila ,
Dave V. Lang ,
R. Bruce Van Dover  and
Chris D.W. Jones
Karen Chu
Affiliation:
Department of Chemical Engineering, University of California, Los Angeles, CA 90095
Byeong-Ok Cho
Affiliation:
Department of Chemical Engineering, University of California, Los Angeles, CA 90095
Jane P. Chang
Affiliation:
Department of Chemical Engineering, University of California, Los Angeles, CA 90095
Mike L. Steigerwald
Affiliation:
Department of Chemical Engineering, University of California, Los Angeles, CA 90095
Robert M. Fleming
Affiliation:
Department of Chemical Engineering, University of California, Los Angeles, CA 90095
Robert L. Opila
Affiliation:
Department of Chemical Engineering, University of California, Los Angeles, CA 90095
Dave V. Lang
Affiliation:
Department of Chemical Engineering, University of California, Los Angeles, CA 90095
R. Bruce Van Dover
Affiliation:
Department of Chemical Engineering, University of California, Los Angeles, CA 90095
Chris D.W. Jones
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974
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Abstract

We studied the effect of carbon incorporation on the material and electrical properties of Ta2O5 thin film. We doped the Ta2O5 films with carbon using pulsed-dc reactive and rfmagnetron sputtering of Ta2O5 performed in an Ar/O2/CO2 plasma. In thick (70 nm) films, an optimal amount (0.8 - 1.4 at.%) of carbon doping reduced the leakage current to 10−8 A/cm2 at +3 MV/cm, a four orders of magnitude reduction compared to that in a pure Ta2O5 film grown in similar conditions without CO2 in the plasma. This finding suggests that carbon doping can significantly improve the dielectric leakage property at an optimal concentration. X-ray Photoemission Spectroscopy (XPS) analysis showed the presence of carbonate in these electrically improved carbon-doped films. Analysis by high-resolution transmission electron microscopy (HRTEM) exhibited no morphological or structural changes in these carbon doped films. Carbon doping showed no improvement in the leakage current in thin (10 nm) Ta2O5 films. This phenomenon is explained by a defect compensation mechanism, in which the carbon-related defects remove carriers at low concentrations but form a hopping conduction path at high concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 672: Symposium O – Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures , 2001 , O8.39
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1 Tang, K.S., Lau, W.S., Samudra, G.S., IEEE Circuits and Devices, May, 27-33, (1997)Google Scholar
2 Ishitani, A., Lesaicherre, P., Kamiyama, S., Ando, K., and Watanabe, H., IEICE Transactions of Electronics, E76–C, 11, 1564–1581 (1991)Google Scholar
3 Kotecki, D., Semiconductor International, 109–116, Nov (1996)Google Scholar
4 Kinley, K. A., Thin Solid Films, 290–291, 440–446, (1996)Google Scholar
5 Chang, J. P., Steigerwald, M.L., Fleming, R.M., Opila, R.L.et. al., Appl. Phys. Lett. 74, 24 (1999)Google Scholar
6 Alers, G. B., Dover, R.B. van, Schneemeyer, L.F., Stirling, L., Sung, C.Y., Diodato, P.W., Liu, R., Wong, Y.H., R.M Fleming, Lang, D.V., Chang, J.P., Private CommunicationGoogle Scholar
7 Matsui, Y., Torii, K., Hirayama, M., Fujisaki, Y., Iijima, S., and Ohji, Y., IEEE Electron Device Letters 17, 431 (1996)Google Scholar
8 Chandeliere, C., Autran, J.L., Devine, R.A.B., Balland, B., Materials Sci. and Eng. R22, 269–322 (1998)Google Scholar
9 Sun, S. C., Chen, T.F., IEEE Trans. Electron Devices, ED–44 1027 (1997)Google Scholar
10 Aoyama, T., Saida, S., Okayama, Y., Fujisaki, M., Imai, K., and Arikado, T., J. Electrochem. Soc. 143, 977 (1996)Google Scholar
11 Naghori, A., and Raj, R., Journal of American Ceramic Society, B78B, 6, 1585–1592, (1995)Google Scholar
12 Hutteman, R. D., Morabito, J.M., and Gerstenberg, D., IEEE Transactions on Parts, Hybrids, and Packaging PHP-11 (No. 1), 67 (1975)Google Scholar
13 Thomas, J. H. III, Appl. Phys. Lett., 22, 8, 406–408, (1973)Google Scholar
14 Fleming, R. M., Lang, D.V., Jones, C.D.W., Steigerwald, M.L., Murphy, D.W., Alers, G.B., Wong, Y-H, Dover, R.B. van, Kwo, J. R., and Sergent, A.M., J. of Appl. Phys., 88, 2, 850–862 (2000)Google Scholar