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Manipulation of ZnO Nanowire by Low-Temperature Solution Approach

Published online by Cambridge University Press:  01 February 2011

Chia-Hsin Lin
Affiliation:
[email protected], Industrial Technology Research Institute, Materials Research Laboratories, I300, MRL/ITRI, Rm.324, Bldg.77, 195 Sec.4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan, 310, Taiwan
Syh-Yuh Cheng
Affiliation:
[email protected], Industrial Technology Research Institute, Materials Research Laboratories
Ren-Jay Lin
Affiliation:
[email protected], Industrial Technology Research Institute, Materials Research Laboratories
Yi-Hui Wang
Affiliation:
[email protected], Industrial Technology Research Institute, Materials Research Laboratories
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Abstract

A catalyst free, structure-induced heterogeneous nucleation and direct growth of ZnO nanowires on organic and inorganic substrates was prepared by low-temperature solution approach process. The experimental results showed that ZnO nanowires could be directly synthesized upon the concave of substrate without any pre-seeding. In this work ZnO nanowires were grown on both polystyrene bead layer and physical-grinded wafer substrate. ZnO nanowires with a broad aspect ratio of 10−2 ∼ 102 was controlled mainly by adjusting of reactant concentration and pH state of solution. A needle-like ZnO nanotip were also prepared by a two-step limited growth condition as a result that tip diameter is several nanometers only, which may be highly in favor of the field emission. Structure-induced heterogeneous nucleation and growth facilitates the fabrication of ZnO nanowires as the potential photoeletronic units in field-emission displays.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

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