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Manipulation of ZnO Nanowire by Low-Temperature Solution Approach

Published online by Cambridge University Press:  01 February 2011

Chia-Hsin Lin ,
Syh-Yuh Cheng ,
Ren-Jay Lin  and
Yi-Hui Wang
Chia-Hsin Lin
Affiliation:
[email protected], Industrial Technology Research Institute, Materials Research Laboratories, I300, MRL/ITRI, Rm.324, Bldg.77, 195 Sec.4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan, 310, Taiwan
Syh-Yuh Cheng
Affiliation:
[email protected], Industrial Technology Research Institute, Materials Research Laboratories
Ren-Jay Lin
Affiliation:
[email protected], Industrial Technology Research Institute, Materials Research Laboratories
Yi-Hui Wang
Affiliation:
[email protected], Industrial Technology Research Institute, Materials Research Laboratories
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Abstract

A catalyst free, structure-induced heterogeneous nucleation and direct growth of ZnO nanowires on organic and inorganic substrates was prepared by low-temperature solution approach process. The experimental results showed that ZnO nanowires could be directly synthesized upon the concave of substrate without any pre-seeding. In this work ZnO nanowires were grown on both polystyrene bead layer and physical-grinded wafer substrate. ZnO nanowires with a broad aspect ratio of 10−2 ∼ 102 was controlled mainly by adjusting of reactant concentration and pH state of solution. A needle-like ZnO nanotip were also prepared by a two-step limited growth condition as a result that tip diameter is several nanometers only, which may be highly in favor of the field emission. Structure-induced heterogeneous nucleation and growth facilitates the fabrication of ZnO nanowires as the potential photoeletronic units in field-emission displays.

Keywords

nanostructuresurface chemistrycrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE10-21
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Lee, C. J., Lee, T.J., Lyu, S.C., Zhang, Y., Ruh, H., Lee, H. J., Appl. Phys. Lett., 81, 3648 (2002)Google Scholar
2. Zhu, Y. W., Zhang, H.Z., Sun, X.C., Feng, S. Q., Xu, J., Zhao, Q., Xiang, B., Wang, R.M., Yu, D. P., Appl. Phys. Lett., 83, 144 (2003)10.1063/1.1589166Google Scholar
3. Jo, S.H., Lao, J.Y., Ren, Z.F., Farrer, R.A., Baldacchini, T., Fourkas, J. T., Appl. Phys. Lett., 83, 4821 (2003)Google Scholar
4. Hung, C.-H., Whang, W.-T., J. Cryst Growth, 268, 242 (2004)Google Scholar
5. Kim, T.Y., Lee, S.H., Mo, Y.H., Nahm, K.S., Kim, J.Y., Suh, E.K., Kim, M., Korean J. Chem. Eng., 21(3), 733 (2004)Google Scholar
6. Pirio, G., Legagneux, P., Pribat, D., Teo, K.B.K., Chhowalla, M., Amaratunga, G.A.J., Milne, W.I., Nanotechnology, 13, 1 (2002)Google Scholar
7. Cheng, Y., Zhou, O., C. R. Physique, 4, 1021 (2003)Google Scholar
8. Park, W.I., Kim, D.H., Jung, S.-W., Yi, G.-C., Appl. Phys. Lett., 80, 4232 (2002)Google Scholar
9. Hung, C.-H., Whang, W.-T., Mater. Chem. Phys., 82, 705 (2003)Google Scholar
10. Shiu, J.-Y., Kuo, C.-W., Chen, P., Mou, C.-Y., Chem. Mater., 16(4), 561. (2004)Google Scholar
11. Park, W.I., Yi, G.-C., Kim, M., Pennycook, S. J., Adv. Mater., 14(24), 1841 (2002)Google Scholar
12. Li, W.-J., Shi, E.-W., Zhong, W.-Z., Yin, Z.-W., J. Cryst. Growth, 203, 186 (1999)Google Scholar
13. Zhang, H., Yang, D., Ma, X., Ji, Y., Xu, J., Que, D., Nanotechnology, 15, 622 (2004)Google Scholar