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Making Wafer Bonding Viable for Mass Production

Published online by Cambridge University Press:  01 February 2011

Cher Ming Tan ,
Wei Bo Yu  and
Wei Jun
Cher Ming Tan
Affiliation:
School of EEE, Nanyang Technological University, Block S2, Nanyang Avenue, Singapore 639798
Wei Bo Yu
Affiliation:
School of EEE, Nanyang Technological University, Block S2, Nanyang Avenue, Singapore 639798
Wei Jun
Affiliation:
Singapore Institute of Manufacturing Technology, Singapore 638075
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Abstract

Direct wafer bonding was performed under medium vacuum condition. High bonding strength (larger than 20 MPa) is achieved at the bonding temperature of only 400°C, and the annealing time for complete bonding is less than 5 hours. The bonding efficiency (percentage of the bonded area over entire wafer area) of the medium vacuum wafer bonding (MVWB) is also found to be better than the traditional wafer bonding.

Qualitative description of the mechanism of MVWB is proposed in present work. It is believed that the medium vacuum can enhance the out-diffusion of the water molecules and other trapped impurities through the bonding interface which is porous initially. This enhanced diffusion speeds up the chemical reaction for the formation of Si-O-Si, and thus more bonding sites are available before the interface close-up. As a result, we observe an increase in bonding strength, bonding efficiency and the bonding speed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 869: Symposium D – Materials, Integration and Technology for Monolithic Instruments , 2005 , D2.8
Copyright
Copyright © Materials Research Society 2005

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