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Magnetoresistance and Hall Effect Characterisation on Magnetic Thin Films Multilayers

Published online by Cambridge University Press:  10 February 2011

Jenica Neamtu  and
Marius Volmer
Jenica Neamtu
Affiliation:
Transilvania University, 29 Eroilor, Brasov 2200, Romania
Marius Volmer
Affiliation:
Research and Development Institute for Electrical Engineering, 313 Splaiul Unirii, Bucharest, Romania
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Abstract

We have performed both Hall effect, and magnetoresistance measurements on thin films of Permalloy (Py 10 nm) and Py(tPy)/Cu(tCu)/Py(tPy) multilayers deposited on thermally oxidized Si substrates, where tPy=4 and 10 nm and tCu=4 and 8 nm. The measurements were made at room temperature in a setup that allows us to perform both Hall effect and magnetoresi stance measurements. The Hall effect measurements were performed varying the angle, Δθ, between the magnetic field direction and the normal to the film plane from 0 to 90 degrees. The measured voltages present hysteresis loops at low magnetic field even for Δθ=0°. From these measurements we can obtain some information regarding the magnetic properties of our samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 746: Symposia Q/R – Magnetoelectronics-Novel Magnetic Phenomena in Nanostructures – Advanced Characterization of Artificially Structured Magnetic Materials , 2002 , R5.5
Copyright
Copyright © Materials Research Society 2003

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References

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