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A Luminescence Study of Electron-Irradiated ZnO Crystals

Published online by Cambridge University Press:  31 January 2011

Manuel Avella ,
Oscar Martínez ,
Juan Jiménez ,
Buguo Wang ,
P. Devrinsky  and
David Bliss
Manuel Avella
Affiliation:
[email protected], Universidad de Valladolid, Física de la Materia Condensada, Valladolid, Spain
Oscar Martínez
Affiliation:
[email protected], Universidad de Valladolid, Física de la Materia Condensada, Valladolid, Spain
Juan Jiménez
Affiliation:
[email protected], University of Valladolid, Paseo de Belén, 1, Valladolid, 47011, Spain
Buguo Wang
Affiliation:
[email protected], Solid State Scientific Corp., Hollis, New Hampshire, United States
P. Devrinsky
Affiliation:
[email protected], Air Force Research Laboratory, Sensors Directorate, Hanscom, Massachusetts, United States
David Bliss
Affiliation:
[email protected], Air Force Research Laboratory, Sensors Directorate, Hanscom, Massachusetts, United States
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Abstract

ZnO crystals were irradiated with high energy electrons (1MeV). The main defects created were analyzed by cathodoluminescence (CL) spectroscopy. The main effects of irradiation on the CL spectrum were the partial quenching of the emission, the shift of the visible luminescence to the yellow, and the observation of an additional band and its phonon replicas at ∼3.32 eV. Zinc vacancy related defects are postulated as responsible for the changes induced in the spectrum.

Keywords

electron irradiationluminescencedefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H05-09
Copyright
Copyright © Materials Research Society 2010

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References

1 McCluskey, M. D. and Jokela, S. J., J. Appl. Phys. 106, 071101 (2009).10.1063/1.3216464Google Scholar
2 Vlasenko, L. S. and Watkins, G. D., Phys. Rev. B 71, 125210 (2005).10.1103/PhysRevB.71.125210Google Scholar
3 Tuomisto, F., Ranki, V., Saarinen, K., and Look, D. C., Phys. Rev. Lett. 91, 205502 (2003).10.1103/PhysRevLett.91.205502Google Scholar
4 Koscum, C., Look, D. C., Farlow, G. C., and Sizelove, J. R., Semicond. Sci. Technol. 19, 752 (2004).Google Scholar
5 Chichibu, S. F., Onuma, T., Kubota, M., Uedono, A., Sota, T., Tsukazaki, A., Ohtomo, A., and Kawasaki, M., J. Appl. Phys. 99, 093505 (2006).10.1063/1.2193162Google Scholar
6 Mass, J., Avella, M., Jiménez, J., Rodríguez, A., Rodríguez, T., Callahan, M., Bliss, D., and Wang, Buguo, J. Cryst. Growth 310, 1000 (2008).10.1016/j.jcrysgro.2007.11.095Google Scholar
7 Hur, T. B., Jeen, G. S., Hwang, Y. H., and Kim, H. K.; J. Appl. Phys. 94, 5787 (2003).10.1063/1.1617357Google Scholar
8 Meyer, B. K., Alves, H., Hofmann, D. M., Kriegseis, W., Forster, D., Bertram, F., Christen, J., Hoffmann, A., Strasburg, M., Dworzak, M., Haboeck, U., and Rodina, A. V., Phys. Stat. Sol. (b) 241, 231 (2004).10.1002/pssb.200301962Google Scholar
9 Schirra, M., Schneider, R., Reiser, A., Prinz, G. M., Feneberg, M., Biskupek, J., Kaiser, U., Krill, C. E., Sauer, R., and Thonke, K., Physica B 401-402, 362 (2007).10.1016/j.physb.2007.08.188Google Scholar
10 Ohno, Y., Koizumi, H., Taishi, T., Yonenaga, I., Fujii, K., Goto, H., and Yao, T., Appl. Phys. Lett. 92, 011922 (2008).10.1063/1.2831001Google Scholar
11 Ong, H. C. and Du, G. T., J. Cryst. Growth 265, 471 (2004).10.1016/j.jcrysgro.2004.02.010Google Scholar
12 Mass, J., Avella, M., Jiménez, J., Callahan, M., Bliss, D., and Wang, Buguo, J. Mater. Res. 22, 3526 (2007).10.1557/JMR.2007.0444Google Scholar
13 Hernández-Fenollosa, M. A., Damonte, L. C., and Marí, B., Superlatt. and Microstr. 38, 336 (2005).10.1016/j.spmi.2005.08.027Google Scholar
14 Coleman, V., Bradby, J. E., Jagadish, C., and Phillips, M. R., Appl. Phys. Lett. 89, 082102 (2006).10.1063/1.2338552Google Scholar
15 Zubiaga, A., Tuomisto, F., Coleman, V. A., Tan, H. H., Jagadish, C., Koike, K., Sasa, S., Inoue, M., and Yano, M., Phys. Rev.B 78, 035125 (2008).10.1103/PhysRevB.78.035125Google Scholar
16 Kanaya, K., and Okayama, S.; J. Phys. D Appl. Phys. 5, 43 (1972).10.1088/0022-3727/5/1/308Google Scholar
17 Agulló-López, F. et al, Point defects in materials, Academic Press, New York, 1988.Google Scholar
18 Vechten, J. A. Van, in Handbook on semiconductors, ed. by Moss, T.S. and Keller, S.P. (North Holland, Amsterdam 1988) ch.1.Google Scholar
19 Zubiaga, A., García, J. A., Plazaola, F., Tuomisto, F., Saarinen, K., Zúñiga-Pérez, J., and Muñoz-Sanjosé, V., J. Appl. Phys. 99, 05316 (2006).10.1063/1.2175476Google Scholar