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Luminescence Properties of Silicon Oxynitride Films

Published online by Cambridge University Press:  28 February 2011

T. Fischer ,
T. Muschik ,
R. Schwarz ,
D. Kovalev  and
F. Koch
T. Fischer
Affiliation:
Technical University of Munich, Physik-Department E16, D-85747 Garching, Germany
T. Muschik
Affiliation:
Technical University of Munich, Physik-Department E16, D-85747 Garching, Germany
R. Schwarz
Affiliation:
Technical University of Munich, Physik-Department E16, D-85747 Garching, Germany
D. Kovalev
Affiliation:
Technical University of Munich, Physik-Department E16, D-85747 Garching, Germany
F. Koch
Affiliation:
Technical University of Munich, Physik-Department E16, D-85747 Garching, Germany
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Abstract

Silicon oxynitride films, deposited by chemical vapour deposition using a high He dilution are investigated with respect to their photoluminescence properties. At low temperatures the PL spectra, which show broad maxima around 2 eV, consist of two contributions with different decay times: a ns-fast and a ms-slow component, the slow one disappearing above 80 K. To account for these findings and for absorption measurements, a model is proposed to describe the structure of the samples consisting of inclusions of Si rich regions in an a-SiOxNy:H matrix with a common molecular aggregate as luminescence center. The different PL lifetimes supposedly result from different feeding mechanisms. Such a behaviour may be present in oxidized porous Si as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 851
Copyright
Copyright © Materials Research Society 1995

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References

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