Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-24T18:48:46.153Z Has data issue: false hasContentIssue false
  • English
  • Français

Luminescence Properties of Silicon Clusters: Chain, Ladder and Cubic Structures

Published online by Cambridge University Press:  28 February 2011

Yoshihiko Kanemitsu
Yoshihiko Kanemitsu*
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
Get access

Abstract

We have studied the luminescence properties of chemically synthesized Si8 clusters and Si-based polymers with different backbone structures. The optical properties of Si8 clusters depend strongly on the shape of clusters. The luminescence properties of the cubic Si8 cluster are different from those of the chain and ladder Si8 clusters. Moreover, the ladder and network Si polymers whose backbones are constructed by the organosilicon units with three Si-Si bonds exhibit broad photoluminescence spectra in the visible region. These luminescence properties are entirely different from those of the chain structure constructed by the organosilicon units having two Si-Si bonds. The unique optical properties of silicon clusters and polymers are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 81
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Light Emission from Novel Silicon Materials, edited by Kanemitsu, Y., Kondo, M., and Takeda, K. (Physical Society of Japan, Tokyo, 1994).Google Scholar
2 Kanemitsu, Y., Suzuki, K., Nakayoshi, Y. and Masumoto, Y., Phys. Rev. B 46, 3916 (1992).Google Scholar
3 Kanemitsu, Y., Suzuki, K., Masumoto, Y., Komatsu, T., Sato, K., Kyushin, S. and Matsumoto, H., Solid State Commun. 86, 545 (1993).Google Scholar
4 Kanemitsu, Y., Suzuki, K., Kondo, K. and Matsumoto, H., Solid State Commun. 89, 619 (1994).Google Scholar
5 Kanemitsu, Y., Suzuki, K., Kondo, K., Kyushin, S. and Matsumoto, H., Phys. Rev. B 51 (1995) (in press).Google Scholar
6 Jarrold, M. F., Science 252, 1085 (1991).Google Scholar
7 Honea, E. C., Ogura, A., Murray, C. A., Raghavachai, K., Sprenger, W. O., Jarrold, M. F. and Brown, W. L., Nature 366, 42 (1993).Google Scholar
8 Matsumoto, H., Higuchi, K., Kyushin, S., and Goto, M., Angrew, . Chem. Int. Ed. Engl. 31, 1354 (1992).Google Scholar
9 Kyushin, S., Matsumoto, H., Kanemitsu, Y. and Goto, M., in Light Emission from Novel Silicon Materials (Ref. 1), p.46.Google Scholar
10 Kanemitsu, Y., Suzuki, K., Kyushin, S. and Matsumoto, H., (unpublished).Google Scholar
11 Cheshnovsky, O., Yang, S. H., Pettiette, C. L., Crsycrft, M. J., Liu, Y. and Smalley, R. E., Chem. Phys. Lett. 138 (1987) 119.Google Scholar
12 Ogura, T., (private communications).Google Scholar
13 Raghavachari, K. and Rohlfing, C. M., J. Chem. Phys. 89 (1988) 2219.Google Scholar
14 Wilson, W. L. and Weidman, T. W., J. Phys. Chem. 65, 4568 (1991).Google Scholar
15 Takeda, K. and Shiraishi, K., Solid State Commun. 85, 301 (1993).Google Scholar