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Low Temperature Photoluminescence Study of Doped CdTe and CdMnte Films Grown by Photoassisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

N. C. Giles ,
R. N. Bicknell  and
J. F. Schetzina
N. C. Giles
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina, 27695-8202
R. N. Bicknell
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina, 27695-8202
J. F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina, 27695-8202
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Abstract

N-type and p-type (100) CdTe films have been grown on (100) CdTe substrates by photoassisted molecular beam epitaxy, using indium and antimony as n-type and p-type dopants, respectively. The application of this growth technique to substitutionally dope another II-VI material is demonstrated by the successful n-type doping of (100) CdMnTe films with indium. Modulationdoped superlattices consisting of barrier layers of CdMnTe:In alternating with CdTe have also been grown. The point defect nature of these in situ doped films and multilayers is studied with low temperature (1.6–5 K) photoluminescence and excitation photoluminescence measurements. The introduction of the dopant atoms using this new growth technique produces immediate changes in the photoluminescence spectra of the epilayers. Photoluminescence studies of the superlattices show the effects of quantum well confinement and band filling due to free carriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 271
Copyright
Copyright © Materials Research Society 1987

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References

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