Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-03T05:34:10.340Z Has data issue: false hasContentIssue false

Low Temperature Internal Friction of thin Fullerene Films

Published online by Cambridge University Press:  15 February 2011

B. E. White Jr.
Affiliation:
Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853–2501
J. E. Freund
Affiliation:
Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853–2501
K. A. Topp
Affiliation:
Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853–2501
R. O. Pohl
Affiliation:
Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853–2501
Get access

Abstract

The lattice vibrations of crystalline solids are generally described by traveling elastic waves. However, the vibrations of fullerene solids are expected to be quite different from typical crystalline solids because of the large molecular mass. In fact, based on measurements of thermal conductivity and specific heat, it appears that the vibrations of compacted fullerene solids are best described as localized. Only below a few Kelvin has evidence for elastic waves been found in these solids where they exist along with the localized tunneling states that are characteristic of amorphous solids. In order to verify the existence of these tunneling defects, the low temperature internal friction of thin fullerene films deposited on a silicon substrate has been measured. Fullerene films were prepared under a variety of conditions with substrate temperatures ranging from 300 K to 500 K. Film grain sizes were characterized using atomic force microscopy, as well as, scanning tunneling microscopy. Grain sizes were found to range between 100 nm and 400 nm. We find that while localized tunneling defects appear to be present in these films, they do not appear to be intrinsic to the fullerene solid. Instead, the tunneling states may be the result of residual disorder that is present in the grain boundaries of the solids.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Einstein, A., Ann. Phys. 22, 180 (1907).Google Scholar
2 Einstein, A., Ann. Phys. 35, 679 (1911).Google Scholar
3 Debye, P., Ann. Phys. 39, 789 (1912).Google Scholar
4 Born, M. and Karman, Th. Von, Phys. Z. 13, 297 (1912).Google Scholar
5 Cahill, D.G. and Pohl, R.O., Solid State Commun. 70, 927 (1989).Google Scholar
6 Cahill, D.G., Watson, S.K., and Pohl, R.O., Phys. Rev. B 46, 6131 (1992).Google Scholar
7 Meissner, M., Tausend, A., and Wobig, D., Phys. Status Solidi A 49, 59 (1978).Google Scholar
8 Olson, J.R., Topp, K.A., and Pohl, R.O., Science 259, 1145 (1993).Google Scholar
9 For a review see Amorphous Solids: Low Temperature Properties, edited by Phillips, W.A. (Springer, Berlin, 1981).Google Scholar
10 White, B.E. Jr., and Pohl, R.O., in Thin Films: Stresses and Mechanical Properties V, Eds., Baker, S. P., Borgesen, P. B., Townsend, P. H., Ross, C. A., and Volkert, C. A., MRS Symposia Proceedings No. 356 (Materials Research Society, Pittsburgh, PA, 1995), in press.Google Scholar
11 Cahill, D.G. and Cleve, J.E. Van, Rev. Sci. Instrum. 60, 2706 (1989).Google Scholar