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Low Temperature Diamond Growth With CF4 Addition in A Hot Filament Reactor

Published online by Cambridge University Press:  22 February 2011

Evaldo. J. Corat ,
V. J. Trava-Airoldi ,
Nélia F. Leite ,
Angel F.V. Peña  and
Vítor Baranauskas
Evaldo. J. Corat
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE/LAS, C. P. 515, 12.201-970, São José dos Campos, S.P., Brazil
V. J. Trava-Airoldi
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE/LAS, C. P. 515, 12.201-970, São José dos Campos, S.P., Brazil
Nélia F. Leite
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE/LAS, C. P. 515, 12.201-970, São José dos Campos, S.P., Brazil
Angel F.V. Peña
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE/LAS, C. P. 515, 12.201-970, São José dos Campos, S.P., Brazil
Vítor Baranauskas
Affiliation:
Faculdade de Engenharia Elétrica, Universidade Estadual de Campinas, Campinas, S.P., Brazil
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Abstract

In this work we show that the addition of a small amount of CF4 to a regular CH4 -H2 gas mixture allows diamond growth at lower temperatures with reasonable growth rates. We used a hot filament assisted reactor and observed diamond growth with a substrate temperature as low as 390 ଌ. We present a comparative study for the growth dependence on substrate temperature with and without CF4 addition in the gas mixture. The growth rate is measured by post growth weighting with a micro balance. Raman spectroscopy, SEM and AFM images show the good quality of the films grown at low temperatures when CF4 is added to the feeding gas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 349: Symposium T – Novel Forms of Carbon II , 1994 , 421
Copyright
Copyright © Materials Research Society 1994

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References

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