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Low Resistivity Mo-W Alloy for A-Si Tft Gate Electrode

Published online by Cambridge University Press:  15 February 2011

Y. Hara ,
M. Atsuta ,
T. Oka ,
Y. Tsuji ,
Y. Ogawa ,
M. Takemura ,
M. Ikeda  and
K. Suzuki
Y. Hara
Affiliation:
Materials and Devices Research Laboratories, Toshiba Corporation, Yokohama, Japan.
M. Atsuta
Affiliation:
Materials and Devices Research Laboratories, Toshiba Corporation, Yokohama, Japan.
T. Oka
Affiliation:
Materials and Devices Research Laboratories, Toshiba Corporation, Yokohama, Japan.
Y. Tsuji
Affiliation:
Materials and Devices Research Laboratories, Toshiba Corporation, Yokohama, Japan.
Y. Ogawa
Affiliation:
Materials and Devices Research Laboratories, Toshiba Corporation, Yokohama, Japan.
M. Takemura
Affiliation:
Materials and Devices Research Laboratories, Toshiba Corporation, Yokohama, Japan.
M. Ikeda
Affiliation:
Materials and Devices Research Laboratories, Toshiba Corporation, Yokohama, Japan.
K. Suzuki
Affiliation:
Materials and Devices Research Laboratories, Toshiba Corporation, Yokohama, Japan.
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Abstract

Among various requirements for the a-Si TFT-LCD gate electrode, low resistivity is becoming more emphasized with the increase of display size and information content as well as process feasibility. We have developed a low resistivity Mo-W alloy as a material for gate buslines.

The Mo-W film was formed by DC magnetron sputtering using Ar or Kr as the working gas. The resistivity of the fabricated film was 16 μΩ-cm when deposited with Ar, and decreased to a value as low as 13 μΩ-cm with Kr, which was less than a half that of the conventional Mo-Ta film. Inverted staggered a-Si TFTs having Mo-W gate electrodes formed with Kr were fabricated, and good transfer performance with thermal- and electrical stability was obtained. The applicability of the new alloy to LCDs with large area and high resolution was shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 675
Copyright
Copyright © Materials Research Society 1996

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References

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