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Low Deep Impurity InxGa1-xP Grown by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  26 February 2011

Z. C. Huang ,
Bing Yang ,
H. K. Chen  and
J. C. Chen
Z. C. Huang
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228
Bing Yang
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228
H. K. Chen
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228
J. C. Chen
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228
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Abstract

InxGai-xP (x=0.49) layers lattice-matched to GaAs have been grown by metalorganic chemical vapor deposition (MOCVD). We did not observe any deep levels in the temperature range of 30-380K by deep level transient spectroscopy (DLTS) in undoped In0.49Ga0.51P layers which have a background concentration of 3.1×1015 cm−3. The deep levels, if they exist, have a concentration of less than 5×1011 cm−3, which is the lowest deep level concentration found so far in InxGa1-xP materials. Moreover, lattice-mismatched InxGa1-xP/GaAs heterojunctions were deliberately grown by varying the In-composition ranging from 0.43 to 0.57. No deep levels were created in 1-μm-thick InxGa1-xP layers due to lattice mismatch when 0.469 < x < 0.532. However, we have observed a shallow electron trap at EC - 60 meV in InxGa1-xP layers with x < 469, and a deep electron trap located at Ec - 0.85 eV in the samples with x > 0.532. We suggest that the lattice-mismatch-induced-defects in InxGa1-xP are either electrically inactive or resided outside the bandgap when In content ranging from 0.469 to 0.532.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 189
Copyright
Copyright © Materials Research Society 1995

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