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Local Strain Effects in Near-Field Spectra of Single Semiconductor Quantum Dots.

Published online by Cambridge University Press:  11 February 2011

A. M. Mintairov ,
P. A. Blagnov ,
O. V. Kovalenkov ,
C. Li ,
J. L. Merz ,
S. Oktyabrsky ,
K. Sun ,
V. Tokranov ,
A. S. Vlasov  and
D. A. Vinokurov
A. M. Mintairov
Affiliation:
Electrical Engineering Department, University of Notre Dame, Notre Dame, IN 46556, USA
P. A. Blagnov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
O. V. Kovalenkov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
C. Li
Affiliation:
Aerospace and Mechanical Engineering Department, University of Notre Dame, IN 46556, USA
J. L. Merz
Affiliation:
Electrical Engineering Department, University of Notre Dame, Notre Dame, IN 46556, USA
S. Oktyabrsky
Affiliation:
UAlbany Inst. for Materials University at Albany-SUNY, 251 Fuller Rd. Albany, NY 12203
K. Sun
Affiliation:
Electrical Engineering Department, University of Notre Dame, Notre Dame, IN 46556, USA
V. Tokranov
Affiliation:
UAlbany Inst. for Materials University at Albany-SUNY, 251 Fuller Rd. Albany, NY 12203
A. S. Vlasov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
D. A. Vinokurov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
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Abstract

Experimental and theoretical investigations of high-energy shifts of single InAs, InGaAs, InAlAs and InP quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip are reported. “Pressure” coefficients of 0.65–3.5 meV/nm have been measured for ground state emission lines in agreement with numerical calculations. We show that the observed increase of the tip-induced energy shift with increasing aperture diameter is caused by a decrease of the uniaxial strain component. We also report the effect of emission instability of single QD emission intensity under tip-induced pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , E7.4
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Mintairov, A. M., Blagnov, P. A., Kovalenkov, O. V., Li, C., Merz, J. L., Oktyabrsky, S., Tokranov, V., Vlasov, A. S., Vinokurov, D. A., Mat. Res. Soc. Proc. 722, (2002).Google Scholar
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