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Light Emission Versus Excitation from Porous Structures in Ion-Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

É. Vázsonyi ,
I. Barsony ,
T. Lohner ,
M. Fried ,
J. Erostyák ,
M. Rácz  and
F. Pászti
É. Vázsonyi
Affiliation:
Research Institute for Materials Science - ATKI, P.O.Box 49, H-1525 Budapest, Hungary
I. Barsony
Affiliation:
Research Institute for Materials Science - ATKI, P.O.Box 49, H-1525 Budapest, Hungary
T. Lohner
Affiliation:
Research Institute for Materials Science - ATKI, P.O.Box 49, H-1525 Budapest, Hungary
M. Fried
Affiliation:
Research Institute for Materials Science - ATKI, P.O.Box 49, H-1525 Budapest, Hungary
J. Erostyák
Affiliation:
Janus Pannonius University of Sciences, H-7624 Pécs, Hungary.
M. Rácz
Affiliation:
Research Institute for Technical Physics - MFKI, P.O.Box 76, 1325 Budapest, Hungary
F. Pászti
Affiliation:
Research Institute for Particle and Nuclear Physics-RMKI, P.O.Box 49, 1525 Budapest, Hungary
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Abstract

The quantum efficiency of electroluminescence (EL) in porous silicon structures (PSL) is practically limited by the mechanical instability of higher porosity layers. This can be overcome by adding a thin implanted p+ surface region before the formation of PSL. The resulting structure consisted of different morphologies depending on the local doping level. When the implantation doping level and diffusion depth was increased, reduced photoluminescence (PL) from the otherwise strongly emitting buried PSL of 80% porosity was obtained. Spectroscopic ellipsometry provided detailed analysis of optical transmission of PSL prepared on a boron implanted substrate. Since the spectral transmission of PSL is morphology dependent, in this novel structure the excitation wavelength can be absorbed in the upper mesoporous p+ region, which is much more transparent for the visible emission spectrum. The width and peak position as well as integral intensity of EL spectra during anodic oxidation of the novel, workable structure were not affected by the doping level in the thin surface region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 653
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Lehmann, V., Jobst, B.. Muschik, T., Kux, A., Petrova-Koch, V.; Jpn. Journal of Applied Physics Vol.32 (5A). (1993) 2095–2099 Google Scholar
2 Herino, R., Bomchil, G., Barla, K., Bertrand, C., Ginoux;, J.L. J.Electrochem. Soc. Vol. 134(8) (1987) 1994–2000 Google Scholar
3 Canham, Leigh, MRS Bulletin Vol. XVII. No. 7 (1993) 22–28.Google Scholar
4 Bársony, I., Klappe, J.G.E., Vázsonyi, É., Lohner, T., Fried;, M. MRS Spring Meeting April 4-8 San Francisco, Mat. Res. Soc. Symp. Proc. Vol. 342 (1994) 91–96 Google Scholar
5 Steiner, P., Kozlowski, F., Lang, W, Appl. Phys. Lett. 62 (21) (1993) 2700 Google Scholar
6 Pickering, C., Canham, L.T., Brumhead, D., Applied Surface Science 63 (1993) 22 Google Scholar
7 Ferrieu, F., Halimaoui, A., Bensahel, D., Solid State Communications 84 (1992) 293 Google Scholar
8 Rossow, U., Münder, H., Thönissen, M., Theiss, W., Journal of Luminescence 57 (1993) 205 Google Scholar
9 Sagnes, I., Halimaoui, A., Vincent, G. ant Badoz, P.A., Appl. Phys. Lett. 62 (10) (1993) 1155 Google Scholar