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Leds Based on Oxidized Porous Polysilicon on a Transparent Substrate

Published online by Cambridge University Press:  09 August 2011

C. C. Striemer ,
S. Chan ,
H. A. Lopez ,
K. D. Hirschman ,
H. Koyama ,
Q. Zhu ,
L. Tsybeskov ,
P. M. Fauchet ,
N. M. Kalkhoran  and
L. Depaulis
C. C. Striemer
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
S. Chan
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
H. A. Lopez
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
K. D. Hirschman
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
H. Koyama
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
Q. Zhu
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
L. Tsybeskov
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
P. M. Fauchet
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
N. M. Kalkhoran
Affiliation:
Spire Corporation, Bedford, MA 01730
L. Depaulis
Affiliation:
Spire Corporation, Bedford, MA 01730
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Abstract

Light emitting devices (LEDs) based on porous polysilicon (PPS) have been fabricated on a transparent quartz substrate. Several structures have been developed, each consisting of a backside contact (ITO or p+ polysilicon), a light emitting PPS layer, a capping layer, and a metal top contact. Photoluminescence (PL) from PPS is similar to that of etched crystalline Si, peaking near 750 nn and showing degradation during 515 nm laser excitation with intensity <100 mW/cm2. This degradation disappears if PPS is oxidized after formation. Visible electroluminescence (EL) has been achieved in both oxidized and non-oxidized PPS devices with voltages under 10 V and current densities <200 mA/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 511
Copyright
Copyright © Materials Research Society 1999

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