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Leakage currents of large area InP/InGaAs heterostructures

Published online by Cambridge University Press:  27 January 2014

Anders Olsson ,
Abuduwayiti Aierken ,
Jani Oksanen ,
Harri Lipsanen  and
Jukka Tulkki
Anders Olsson
Affiliation:
Department of Biomedical Engineering and Computational Science, Aalto University Espoo, Finland Department of Micro- and Nanosciences, Aalto University Espoo, Finland
Abuduwayiti Aierken
Affiliation:
Department of Micro- and Nanosciences, Aalto University Espoo, Finland
Jani Oksanen
Affiliation:
Department of Biomedical Engineering and Computational Science, Aalto University Espoo, Finland
Harri Lipsanen
Affiliation:
Department of Micro- and Nanosciences, Aalto University Espoo, Finland
Jukka Tulkki
Affiliation:
Department of Biomedical Engineering and Computational Science, Aalto University Espoo, Finland
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Abstract

Light-emitting diodes (LEDs) based on the conventional III-V compound semiconductors are known to exhibit internal quantum efficiencies (IQE) that are very close to unity. Ideally, the high IQE is expected to enable electroluminescent cooling with a cooling capacity of several Watts per cm2 of emitter area. One key requirement in enabling such cooling is the ability to fabricate high quality large area LEDs. However, detailed information on the performance of relevant large area devices and their yield is extremely scarce. In this report we present data on the yield and related large area scaling of InP/InGaAs LEDs by using current-voltage measurements performed on LED wafers fabricated at five different facilities. The samples were processed to contain square shaped mesas of sizes 0.25 mm2 and 16 mm2 operating as LEDs. While most of the smaller mesas showed relatively good electrical characteristics and low leakage current densities, some of them also exhibited very large leakage currents. In addition, in some cases the large area devices exhibited large, and even almost linearly behaving leakage currents. Such information on the scaling and unidealities of diodes fabricated using established fabrication technologies is crucial for the development of the optical cooling technologies relying on large area devices.

Keywords

electrical propertiessemiconductingoptoelectronic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 75 - 81
Copyright
Copyright © Materials Research Society 2014 

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