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Lattice Defects in β-Sic Grown Epitaxially On Silicon Substrates

Published online by Cambridge University Press:  28 February 2011

P. Pirouz ,
C. M. Chorey ,
T. T. Cheng&  and
J. A. Powell
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve university, Cleveland, OHIO 44106
C. M. Chorey
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve university, Cleveland, OHIO 44106
T. T. Cheng&
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve university, Cleveland, OHIO 44106
J. A. Powell
Affiliation:
NASA Lewis Research Center, Cleveland, OHIO 44135.
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Abstract

Defects generated in β-SiC grown on a (001) silicon substrate by chemical vapor deposition (CVD) are charaterized and their mechanism of formation discussed. It is argued that nucleation plays a primary role in this heteroepitaxial system where the lattice mismatch is so large.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 399
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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