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Laser Ultrasonic Instrumentation for Accurate Temperature Measurement of Silicon Wafers in Rapid Thermal Processing Systems

Published online by Cambridge University Press:  10 February 2011

Dan Klimek ,
Brian Anthonyt ,
Agostino Abbate  and
Petros Kotidis
Dan Klimek
Affiliation:
Textron Systems, Wilmington, MA
Brian Anthonyt
Affiliation:
Textron Systems, Wilmington, MA
Agostino Abbate
Affiliation:
Textron Systems, Wilmington, MA
Petros Kotidis
Affiliation:
Textron Systems, Wilmington, MA
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Abstract

Results are presented that demonstrate the use of laser ultrasonic methods to determine the temperature of silicon wafers under conditions consistent with applications in the RTP industry. The results show that it is possible to measure the temperature of Si(100) wafers to an accuracy approaching ± 1°C (1σ) even with wafer thickness variation over a range of 2 to 3 percent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 135
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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