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Laser Assisted Techniques for Diamond and Diamondlike Thin Films

Published online by Cambridge University Press:  26 February 2011

A. Rengan ,
N. Biunno ,
J. Narayan  and
P. Moyer
A. Rengan
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC-27695.
N. Biunno
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC-27695.
J. Narayan
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC-27695.
P. Moyer
Affiliation:
Dept. of Physics, North Carolina State University, Raleigh, NC-27695.
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Abstract

We have deposited diamond-shaped particles using a non equilibrium process of laser ablation from a solid graphite target in a hydrogen discharge. The nucleation on the heated silicon surface occurs in small regions of ∼ 0.1 to 0.5 mm covering a small fraction of the surface. The faceting of the crystals observed are mainly octahedral [111] faces. The results of using an eximer laser to ablate a graphite target are described. SEM micrographs show octahedral faceting. Micro Raman spectroscopy on the crystalline features exhibit two bands at 1348 and at ∼ 1600 cm−1. The peak position and large FWHM suggests the existence of disordered sp3 bonding or short range order existing in the film. Another possibility is the existence of a stress state in the crystal due to the non equilibrium nature and the high rate of growth of the crystals. We have also irradiated HFCVD grown diamond film with a XeCl UV- eximer laser. The results indicated that sp2 bonded graphitic and amorphous component are selectively ablated, enhancing the sp3 hybrid bonds in the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 185
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Deragin, B.V. and Fedosev, D.B.., Sci. Am., 233 [5] 102 (1975).Google Scholar
2. Eversole, W.G.., U.S. Patent No. 3030188 April 17, 1962.Google Scholar
3. Spitsyn, B.V., Bouilov, L.L. and Deraygin, B.V., J. Cryst. Growth 52, 219 (1981)Google Scholar
4. Angus, J.C., Will, H.A. and Stanko, W.S.., J. Appl. Phys. 39, 2915 (1968).Google Scholar
5. Matsumoto, S., Sata, Y., Tsutsumi, M. and Setaka, N., J. Mater. Sci 17, 3106 (1982)Google Scholar
6. Singh, B., Mesker, O.R. and Levine, A.W.., Appl. Phys. Lett., 52 (20) 1658 (1988)Google Scholar
7. Kurihara, K., Sasaki, K., Karawada, M. and Koshina, N.., Appl. Phys. Lett. 52 (6) 437 (1988).Google Scholar
8. Hirose, Y. and Mitsuizumi, M.., New Diamond., 4 (3) 34 (1988).Google Scholar
9. Krishnaswmy, J., Rengan, A., Narayan, J., Vedam, K. and McHargue, C.J.., Appl. Phys. Lett. 54 (24) 2455 (1989).Google Scholar
10. Rengan, A., Krishanaswamy, J., Narayan, J., Matera, G. and Srivatsa, A.R.., Proceedings of SPIE Conf. on Microelectronic Integrated Processing Vol.1190/15 Santa Clara, CA Oct. 1989.Google Scholar
11. Spear, K. E and Frenlach, M.., SDIO, ONR, Diamond Technology Initiative Sym., Crystal City, Va. July 12–14, 1988.Google Scholar
12. Sharma, S.K., Mao, H.K., Bell, P.M. and Xu, J.A.., J. Raman Spect. 16, 5, 350 (1985).Google Scholar
13. Boppart, H., VanStraten, J. and Silvera, J.F.., Phys. Rev. B (32) 1423 (1985).Google Scholar
14. Walrafen, G.E.., SDIO, ONR, Diamond Tech. Init. Sym., Crystal City, VA., July 12 – 14,1988.Google Scholar
15. Knight, D.S. and White, W.B.., J. Mater. Res., 4, 2, 385 (1989)Google Scholar