Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-08T02:48:05.300Z Has data issue: false hasContentIssue false
  • English
  • Français

Large Area Supersonic Jet Epitaxy of AlN, GaN, and SiC on Silicon

Published online by Cambridge University Press:  10 February 2011

L.J. Lauhon ,
S. A. Ustin  and
W. Ho
L.J. Lauhon
Affiliation:
Department of Physics, Cornell University, Ithaca, N.Y., 14853
S. A. Ustin
Affiliation:
Department of Physics, Cornell University, Ithaca, N.Y., 14853
W. Ho
Affiliation:
Department of Physics, Cornell University, Ithaca, N.Y., 14853
Get access

Abstract

AlN, GaN, and SiC thin films were grown on 100 mm diameter Si(111) and Si(100) substrates using Supersonic Jet Epitaxy (SJE). Precursor gases were seeded in lighter mass carrier gases and free jets were formed using novel slit-jet apertures. The jet design, combined with substrate rotation, allowed for a uniform flux distribution over a large area of a 100 mm wafer at growth pressures of 1–20 mTorr. Triethylaluminum, triethylgailium, and ammonia were used for nitride growth, while disilane, acetylene, and methylsilane were used for SiC growth. The films were characterized by in situ optical reflectivity, x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry (SE).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 277
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Strite, S. Morkoc, H., J. Vac. Sci. Technol. B10 (4), 1237 (1992).Google Scholar
2. Brown, K.A., Ustin, S.A. Lauhon, L.J. Ho, W., J. Appl. Phys. 79 7667 1996.Google Scholar
3. Miller, D.R., in Atomic and Molecular Beam Methods, edited by Scoles, G..Google Scholar
4. Ustin, S. A. Brown, K. A., Lauhon, L.J., Hu, D.Q., and Ho, W., Mater. Res. Soc. Proc. 395 319 (1996)Google Scholar
5. Spin-Etch processor manufactured by Laurell Technologies.Google Scholar
6. Ishizazka, A., Nakagawa, K., and Shiraki, Y., Second Int. Symp. on MBE and Clean Surface Related Techniques, ed. by Ueda, R. (Jap. Soc. Appl. Phys., Tokyo 1982) p. 183.Google Scholar
7. Swartzentruber, B.S., Mo, Y.-W., Webb, M.B., and Lagally, M.G., J. Vac. Sci. Technol. A 7 (4), 2901 (1989).Google Scholar
8. Hersee, S.D. and Ballingall, J.M., J. Vac. Sci. Technol. A 8, 800 (1990).Google Scholar
9. Rudolph Research Auto El IV, at the Cornell Nanofabrication Facility.Google Scholar
10. The films in Figure 2 were grown at 750°C, total pressure 1 mTorr, 18 sccm NH3, 5 sccm carrier gas.Google Scholar
11. Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K., and Sawaki, N., J. Cryst. Growth 98, 209 (1989).Google Scholar
12. Warren, B.E., X-Ray Diffraction, (Dover Publications, Inc., New York, 1990), p. 253.Google Scholar