Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-27T03:26:59.707Z Has data issue: false hasContentIssue false
  • English
  • Français

Large Area Subgrain-Boundary-Free Sot Induced by Thermal Gradient Control of Transitional Seeded-Growth

Published online by Cambridge University Press:  22 February 2011

El-Hang Lee
El-Hang Lee*
Affiliation:
Monsanto Electronic Materials Company, P.O. Box 8, St. Peters, MO, 63376
Get access

Abstract

The transitional region of subgrain-boundary-free crystal to subgrain-boundary-laced crystal formed during the initial stage of energy-beam induced seeded recrystallization of thin film silicon on an insulator has been examined to study the primary cause of subgrain boundary formation and the conceptual basis of its suppression. Observations include the systematic variation of: facet, cellular, and dendritic features; subgrain boundary directions and spacings; and the stable growth distance as a function of silicon film thickness and energy beam density. A temperature gradient argument based on constitutional supercooling theory has been used to explain these observations. There are indications that an increased thermal gradient at the solidification front can suppress the onset of growth instability for large area, defect free growth of SOI.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 471
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Materials Research Society Symposia Proceedings (published by North-Holland) (a) Vol 1, (1981); (b) Vol. 4 (1982); (c) Vol. 13 (1983).Google Scholar
2.Leamy, H. J., Chang, C. C., Baumgart, H., Lemons, R. A. and Cheng, J., Materials Letters, 1, 33 (1982).Google Scholar
3.Geis, M. W., Smith, H. I., Silversmith, D. J., Mountain, R. W. and Thompson, C. V., J. Electrochem Soc., 130, 1178, (1983).Google Scholar
4.Lee, E. H., paper (No. 865RNP) presented at 163rd Electrochemical Society Meeting, San Francisco, CA, May 18–22, 1983.Google Scholar
5.Lee, E. H., (paper submitted to Appl. Phys. Lett.)Google Scholar
6. See for example, LaudiseR, A. R, A., The Growth of Single Crystals, Prentice Hall (1970) pp104–l09;Google Scholar
6a.Goodman, C. H. L., Crystal Growth, Plenum Press (1971) pp236;Google Scholar
6b. orChalmers, B., Principles of Solidification, John Wiley & Sons (1964). pp151–164 .Google Scholar
7.Geis, M. W., Smith, H. I., Tsaur, B-Y, Fan, John C. C., Silversmith, D. J., and Mountain, R. W., J. Electrochem. Soc., 129 2812 (Dec. 1982).Google Scholar
8.Lemons, R. A., Bosch, M. A., and Herbst, D., in Materials Research Society Symposia Proceedings, Vol 13 (North-Holland, 1983), pp 581Google Scholar
9.Seely, J. H., Elements of Thermal Technology, Marcel Dekker, Inc. (1981)Google Scholar
10.Celler, G. K., Robinson, McD. and Lischner, D. J., Appl. Phy. Lett. 42, 99 (1983)Google Scholar