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Kinetics of Charge Trapping and Emission in CIGS Solar Cells

Published online by Cambridge University Press:  01 February 2011

Aleksander Urbaniak ,
Malgorzata Igalson  and
Susanne Siebentritt
Aleksander Urbaniak
Affiliation:
[email protected], Warsaw University of Technology, Faculty of Physics, Koszykowa 75, Warszawa, PL 00662, Poland
Malgorzata Igalson
Affiliation:
[email protected], Faculty of Physics, Warsaw University of Technology, Koszykowa 75, Warszawa, PL 00662, Poland
Susanne Siebentritt
Affiliation:
[email protected], Hahn-Meitner-Institut, Glienicker Straße 100, Berlin, D-14109, Germany
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Abstract

In this work we investigate bias - induced metastability in CIGS solar cells. Long - term capacitance transients have been measured for two baseline CIGS devices with different efficiencies and a CGS cell in order to analyze carrier trapping processes. Based on the results we discuss hole emission process which leads to metastable increase of net acceptor density and also hole capture related to its relaxation. Time constants and activation energies for hole emission and capture have been obtained. Apart of carrier trapping processes we have also distinguished an interface-related change of capacitance. Our results indicate processes involving thermal lattice relaxation. We explain them in light of properties of (VSe+VCu) divacancy, defect with negative correlation energy, which can exist in both donor and acceptor configuration.

Keywords

defectskineticsthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1012: Symposium Y – Thin-Film Compound Semiconductor Photovoltaics-2007 , 2007 , 1012-Y12-16
Copyright
Copyright © Materials Research Society 2007

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