Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-02T21:21:07.642Z Has data issue: false hasContentIssue false
  • English
  • Français

A Junction Field Effect Transistor Based on Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  17 March 2011

D. Caputo ,
G. de Cesare ,
A. Nascetti ,
V. Kellezi  and
F. Palma
D. Caputo
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”via Eudossiana 18, 00184, Rome, Italy
G. de Cesare
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”via Eudossiana 18, 00184, Rome, Italy
A. Nascetti
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”via Eudossiana 18, 00184, Rome, Italy
V. Kellezi
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”via Eudossiana 18, 00184, Rome, Italy
F. Palma
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”via Eudossiana 18, 00184, Rome, Italy
Get access

Abstract

An hydrogenated amorphous silicon junction field effect transistor suitable for analog and digital applications is presented. The device is constituted by a p+ - i - n− junction, with the drain and source contacts patterned on the n-doped layer and the gate electrode patterned on the p+ doped layer. As in the crystalline case, the device is a voltage-controlled resistor, and its drain-source resistance can be varied, with a voltage applied to the gate electrode, by modulating the width of the depletion layer extending into the n-type channel.

The doping value of this layer has been chosen as a trade-off between high value of channel conductivity and a relatively low defect density in the material. The manufactured device, with W/L=5000/200 μm, shows the typical current-voltage curves of a JFET. In particular, at low VDS, the current presents the linear behavior of the triode zone, where the JFET operates as a linear resistance whose value is controlled by the gate voltage. At higher VDS the JFET works in the pinch-off region as a dependent current generator.

First results are very encouraging, since we have achieved transconductance values of 10−6 V/A, which are comparable to those of state of the art TFT.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A31.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Street, R. A., Wu, X. D., Weisfield, R., Ready, S., Apte, R., Nguyen, M., Nylen, P., Mat. Res. Symp. Proc. 377, p.757 (1995).Google Scholar
[2] Cesare, G. de, Irrera, F., Lemmi, F., Palma, F., Appl. Phys. Lett. 66, p. 1178 (1995).Google Scholar
[3] Böhm, M. et al. , Mat. Res. Symp. Proc. 507, p. 327 (1998).Google Scholar
[4] Caputo, D., Cesare, G. de, J. Non-Cryst. Solids 227–330, p. 380 (1998).Google Scholar
[5] Mei, P., Boyce, J. B., Fork, D. K., Anderson, G., Ho, J., Lu, J. P., Mat. Res. Symp. Proc. 507, p.3 (1998).Google Scholar
[6] Powell, M.J., Berkel, C. van, Carlson, D. E., Orton, J. W.; Properties of amorphous silicon; INSPEC Publication, chap. 7, p. 255, London (1989).Google Scholar
[7] Berkel, C. van, in Amorphous and Microcrystalline Semiconductor Device, Vol II, Material and Device Physics; edited by Kanicki, Jerzy, p. 397 (1992).Google Scholar
[8] Fortunato, G., Mariucci, L., Reita, C. and Foglietti, P., J. of Non-Cryst. Solids, 115, p. 144 (1989).Google Scholar
[9] Chen, C. and Kanicki, J., IEEE El. Dev. Lett. 17, 437 (1996).Google Scholar
[10] Street, R. A. in “Hydrogenated amorphous silicon”, Cambridge, Solid State Science Series, p. 135 (1991).Google Scholar
[11] Sze, S. M. in “Physics of Semiconductor Devices, 2nd Edition”, Wiley-Interscience Publication, chap. 6, p. 312 (1981).Google Scholar
[12] Caputo, D., Cesare, G. de, Palma, F., Tucci, M., Minarini, C., Terzini, E., Thin Solid Film 303, 269 (1997).Google Scholar
[13] Fulk, R. T., Boyce, J. B., Ho, J., Davis, G. A., Aebi, V., Mat. Res. Symp.Proc., 557 (1999).Google Scholar