Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-28T07:37:23.758Z Has data issue: false hasContentIssue false
  • English
  • Français

Is zinc oxide a potential material for future high-power and high-frequency electron device applications?

Published online by Cambridge University Press:  09 June 2015

Poppy Siddiqua ,
Walid A. Hadi ,
Michael S. Shur  and
Stephen K. O’Leary
Poppy Siddiqua
Affiliation:
School of Engineering, The University of British Columbia, Kelowna, British Columbia, Canada V1V 1V7
Walid A. Hadi
Affiliation:
School of Engineering, The University of British Columbia, Kelowna, British Columbia, Canada V1V 1V7
Michael S. Shur
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590, U.S.A.
Stephen K. O’Leary
Affiliation:
School of Engineering, The University of British Columbia, Kelowna, British Columbia, Canada V1V 1V7
Get access

Abstract

At the present moment, zinc oxide is primarily being used as an electronic material for low-field thin-film transistor and transparent conducting oxide device applications. In this paper, we present some recent results on the steady-state electron transport within zinc oxide suggesting that this material may also be considered as an alternative material to gallium nitride for high-power and high-frequency electron device applications. The expected device performance that may be obtained from zinc oxide-based devices is then projected and contrasted with that expected from gallium nitride-based devices. It is shown that zinc oxide-based devices have a slight advantage when compared with the case of gallium nitride.

Keywords

electronic materialoxideZn
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1805: Symposium SS/TT – Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications , 2015 , mrss15-2133804
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Ferry, D. K., Phys. Rev. B 12, 2361 (1975).CrossRefGoogle Scholar
Yoder, M. N., IEEE Trans. Electron Devices 43, 1633 (1996).CrossRefGoogle Scholar
Pearton, S. J., Deist, R., Ren, F., Liu, L., Polyakov, A. Y., and Kim, J., J. Vac. Sci. Technol. A 31, 050801 (2013).CrossRefGoogle Scholar
Pengelly, R. S., Wood, S. M., Milligan, J. W., Sheppard, S. T., and Pribble, W. L., IEEE Trans. Micro. Theory and Techn. 60, 1764 (2012).CrossRefGoogle Scholar
O'Leary, S. K., Foutz, B. E., Shur, M. S., and Eastman, L. F., Solid State Commun. 150, 2182 (2010).CrossRefGoogle Scholar
Adachi, S., Properties of Group-IV, III-V and II-VI Semiconductors (Wiley, Chichester, 2005).CrossRefGoogle Scholar
Foutz, B. E., O’Leary, S. K., Shur, M. S., and Eastman, L. F., J. Appl. Phys. 85, 7727 (1999).CrossRefGoogle Scholar
O’Leary, S. K., Foutz, B. E., Shur, M. S., and Eastman, L. F., J. Mater. Sci.: Mater. Electron 17, 87 (2006).Google Scholar
Hadi, W. A., Shur, M. S., and O’Leary, S. K., J. Mater. Sci.: Mater. Electron 25, 4675 (2014).Google Scholar
Siddiqua, P., Hadi, W. A., Shur, M. S., and O’Leary, S. K., J. Mater. Sci.: Mater. Electron DOI 10.1007/s10854-015-3055-7.Google Scholar
Higashiwaki, M. and Matsui, T., Jpn. J. Appl. Phys., Part 2 44, L475 (2005).CrossRefGoogle Scholar
Singisetti, U., Wong, M. H., Dasgupta, S., Speck, J. S., and Mishra, U. K., Appl. Phys. Express 4, 024103 (2011).CrossRefGoogle Scholar