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Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current

Published online by Cambridge University Press:  01 February 2011

Kazuki Nomoto ,
Taku Tajima ,
Tomoyoshi Mishima ,
Masataka Satoh  and
Tohru Nakamura
Kazuki Nomoto
Affiliation:
[email protected], HOSEI University, Department of EECE and Research Center for Micro-Nano Technology, 3-11-15 Midori-cho, Koganei, 184-0004, Japan, +81-42-387-5104, +81-42-387-5121
Taku Tajima
Affiliation:
[email protected], HOSEI University, EECE, 3-11-15 Midori-cho, Koganei, 184-0003, Japan
Tomoyoshi Mishima
Affiliation:
[email protected], R&D Group, Hitachi Cable Ltd., Tsuchiura, 300-0026, Japan
Masataka Satoh
Affiliation:
[email protected], HOSEI University, EECE, 3-11-15 Midori-cho, Koganei, 184-0003, Japan
Tohru Nakamura
Affiliation:
[email protected], HOSEI University, EECE, 3-11-15 Midori-cho, Koganei, 184-0003, Japan
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Abstract

We demonstrate the realization of compatibility of extremely low gate leakage current and low source resistance with Si ion-implanted (I/I) GaN/AlGaN/GaN surface-stabilized high-electron mobility transistor (HEMT) without any recess etching process. The source/drain regions were formed using Si ion implantation into undoped GaN/AlGaN/GaN on sapphire substrate. Using ion implantation into source/drain (S/D) regions with energy of 80 keV, the performances were significantly improved. On-resistance (Ron) reduced from 105 to 9.2 Ω·mm. Saturation drain current (Idss) and maximum transconductance (gmMAX) increased from 49 to 527 mA/mm and from 13 to 84 mS/mm (Vg=+1V).

Keywords

III-Vion-implantationdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-22
Copyright
Copyright © Materials Research Society 2007

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References

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