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Ion-Implantation Getiering of Impurities in CdTe

Published online by Cambridge University Press:  21 February 2011

M. H. Jin ,
K. M. James ,
C. E. Jones  and
J. L. Merz
M. H. Jin
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
K. M. James
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
C. E. Jones
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
J. L. Merz
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
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Abstract

This is the first reported use of ion-implantation damage gettering of impurities in CdTe to provide high-quality substrates for the epitaxial growth of appropriate binary or ternary compounds, or for related applications. We describe the results of photoluminescence (PL) measurements performed on samples of Bridgeman-grown CdTe to study both the annealing behavior and gettering effects in this material. From the PL results, it was found that impurity gettering occurs at temperatures at which liquid phase epitaxy take place (∼500°C) so that these two fabrication procedures are compatible. It was also found that the optimum anneal time at this temperature is four hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 45
Copyright
Copyright © Materials Research Society 1990

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References

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