Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-08T05:12:01.969Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Implantation At Elevated Temperatures*

Published online by Cambridge University Press:  26 February 2011

Nghi Q. Lam  and
Gary K. Leaf
Nghi Q. Lam
Affiliation:
Argonne National Laboratory, 9700 S. Cass Ave., Argonne, IL 60439
Gary K. Leaf
Affiliation:
Argonne National Laboratory, 9700 S. Cass Ave., Argonne, IL 60439
Get access

Abstract

A kinetic model has been developed to investigate the synergistic effects of radiation-enhanced diffusion, radiation-induced segregation and preferential sputtering on the spatial redistribution of implanted solutes during implantation at elevated temperatures. Sample calculations were performed for Al+ and Si+ ions implanted into Ni. With the present model, the influence of various implantation parameters on the evolution of implant concentration profiles could be examined in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 467
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Work supported by the U. S. Department of Energy, BES-Materials Sciences, and BES-Applied Mathematical Sciences, under Contract W-31-109-Eng-38.

References

REFERENCES

1. Johnson, R. A. and Lam, N. Q., Phys. Rev. B13, 4364 (1976).Google Scholar
2. Barbu, A., Acta Metall. 28, 499 (1980).Google Scholar
3. Lam, N. Q. and Leaf-, G. K., submitted to J. Mater. Res.Google Scholar
4. Hindmarsh, A. C., in: Scientific Computing, eds. Stepleman, R. S. et al. (North-Holland, Amsterdam, 1983) p. 55.Google Scholar
5. Biersack, J. P. and Haggmark, L. G., Nucl. Instr. Methods 174, 257 (1980).Google Scholar
6. Andersen, H. H. and Bay, H. L., in Sputtering by Particle Bombardment, ed. Behrisch, R. (Springer, Heidelberg, 1981) p. 145.Google Scholar
7. Okamoto, P. R., Rehn, L. E. and Averback, R. S., J. Nucl. Mater. 133 & 134, 373 (1985).CrossRefGoogle Scholar
8. Lam, N. Q., Okamoto, P. R. and Johnson, R. A., J. Nucl. Mater. 74, 101 (1978).Google Scholar
9. Lam, N. Q., Janghorban, K. and Ardell, A. J., J. Nucl. Mater. 101, 314 (1981).CrossRefGoogle Scholar
10. Mayer, S. G. B., Milillo, F. F. and Potter, D. I., Mat. Res. Soc. Symp. Proc. 39, 521 (1985).Google Scholar