Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-01-27T03:21:51.838Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation on Microvoids in Pecvd a-Si:H

Published online by Cambridge University Press:  01 January 1993

C. Manfredotti ,
F. Fizzotti ,
M. Boero ,
P. Pastorino ,
E. Vittone  and
V. Rigato
E. Vittone
Affiliation:
Experimental Physics Dept., University of Torino, Via Giuria 1, Torino, Italy and Consorzio INFM, Italy
V. Rigato
Affiliation:
Physics Dept., University of Padova, Via Marzuolo 8, Padova, Italy.
Get access

Abstract

The effect of microvoids on optical properties of a-Si:H deposited by PECVD of SiH4 has been investigated in the deposition temperature range between 143°C and 266°C. Microvoids seem not to affect the density up to H concentrations CH of 15%. The density is decreased only by H incorporation, which, at the same time, influences directly the optical energy gap Eg Above CH=15%, microvoids can easily accommodate H and no further variation either of Eg or the index of refraction n can be appreciated. Microvoids are proven to be affected not only by deposition temperature, but also by deposition time and by a further annealing step, even if at a relative extent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 231
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Menna, P., in Winter European Course on Amorphous Silicon, edited by Spear, W.E. and Manfredotti, C., (Folgaria, Italy, 1988).Google Scholar
2. Mahan, A.H., Menna, P. and Tsu, R., Appl. Phys. Lett. 51, 15 (1987).Google Scholar
3. Chen, Y., Jones, S.J., Williamson, D.L., Young, S., Maley, N. and Abelson, J. R., Mat. Res. Soc. Symp. Proc. Vol. 258, 1992, p. 311; Jia, M., Shrinar, J., Chen, Y. and Williamson, D.L., Ibid., p. 282 Google Scholar
4. Mahan, A. H., Chen, Y., Williamson, D.L. and Mooney, G. D., J. non Cryst. Solids 137 & 138, 65 (1991).Google Scholar
5. van den Boogard, M. J., Jones, S. J., Chen, Y., Williamson, D.L., Hackvoort, R.A., Mat. Res. Soc. Symp. Proc. Vol. 258, 1992, p. 407 Google Scholar
6. Cabarrocas, P. Rocay, Buizem, Y. and Theye, M. L., Phil. Mag. 65, 1025 (1992)Google Scholar
7. Joannopoulos, J. D. and Lucovsky, G., in The Physics of Hvdrogenated Amorphous Silicon. (Springer-Verlag, N.Y., 1984)Google Scholar
8. Vanecek, M., Cervinka, D., Favre, M., Curtins, H., Slah, A. V., Mat. Res. Soc. Symp. Proc. vol. 192, p. 639(1990)Google Scholar
9. Meiling, H., van den Boogaard, M. J., Schropp, R. E. I., Bezemer, J., van der Weeg, W. F., Mat. Res. Soc. Proc. Vol. 192, 645 (1990)Google Scholar
10. Chabal, Y. J. and Patel, C. K. N., Phys. Rev. Lett. 53, 210 (1984)Google Scholar
11. Manfredotti, C., Fizzotti, F., Pastorino, P. (to be published)Google Scholar
12. Amato, G., Mea, G. Delia, Fizzotti, F., Manfredotti, C., Marchisio, R., Paccagnella, A., Phys. Rev. B, 43 , 6627 (1991); Langford, A. A., Fleet, M. L., Fleet, B. P., Nelson, B. P., Lanford, W. A., Maley, N., Phys Rev. B, 45, 13367 (1992)Google Scholar
13. Brodsky, M.H. et al. , Appl. Phys. Lett. 30, 561 (1977)Google Scholar
14. Fritsche, H. et al. , J. Appl. Phys. 50, 2366 (1979)Google Scholar
15. Knights, J. C., AIP Conf. Proc. 31, 296 (1976)Google Scholar
16. Papacostantopoulos, D.A., Economou, E.N., Phys. Rev. B, 24, 7233 (1981); Ching, W.Y., Lam, D.J., Lin, C.C., Phys. Rev. B, 297, 2378 (1980)Google Scholar
17. Eberhart, M. E., Johnson, K. H. and Adler, D., Phys. Rev. B, 26, 3138 (1982)Google Scholar
18. Brodsky, M. H., Cardona, M. and Cuomo, J. J., Phys. Rev. B, 16, 3556 (1977)Google Scholar
19. Wagner, H. and Beyer, W., Solid St. Commun., 48, 585 (1983)Google Scholar
20. Reimer, J. A., Vaughan, R. W. and Knights, J. C., Phys. Rev. B, 24, 3360 (1981)Google Scholar